Analysis of the evolution of the trapped charge distributions in 10nm SiO<inf>2</inf> films during DC and bipolar dynamic stress

R. Rodriguez; M. Nafria; J. Suñe; X. Aymerich

doi:10.1016/S0026-2714(97)00098-X

Analysis of the evolution of the trapped charge distributions in 10nm SiO<inf>2</inf> films during DC and bipolar dynamic stress

R. Rodriguez, M. Nafria, J. Suñe, X. Aymerich

Research output: Contribution to journal › Article › Research › peer-review

5 Citations (Scopus)

Abstract

The trapped charge distributions in oxides subjected to static and dynamic stress conditions have been measured. The DC distributions have been related to the oxide reliability and explained in terms of a microscopic degradation model. These results are extrapolated to the dynamic case. © 1997 Elsevier Science Ltd.

Original language	English
Pages (from-to)	1517-1520
Journal	Microelectronics Reliability
Volume	37
DOIs	https://doi.org/10.1016/S0026-2714(97)00098-X
Publication status	Published - 1 Jan 1997

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title = "Analysis of the evolution of the trapped charge distributions in 10nm SiO2 films during DC and bipolar dynamic stress",

abstract = "The trapped charge distributions in oxides subjected to static and dynamic stress conditions have been measured. The DC distributions have been related to the oxide reliability and explained in terms of a microscopic degradation model. These results are extrapolated to the dynamic case. {\textcopyright} 1997 Elsevier Science Ltd.",

author = "R. Rodriguez and M. Nafria and J. Su{\~n}e and X. Aymerich",

year = "1997",

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doi = "10.1016/S0026-2714(97)00098-X",

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T1 - Analysis of the evolution of the trapped charge distributions in 10nm SiO2 films during DC and bipolar dynamic stress

AU - Rodriguez, R.

AU - Nafria, M.

AU - Suñe, J.

AU - Aymerich, X.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - The trapped charge distributions in oxides subjected to static and dynamic stress conditions have been measured. The DC distributions have been related to the oxide reliability and explained in terms of a microscopic degradation model. These results are extrapolated to the dynamic case. © 1997 Elsevier Science Ltd.

AB - The trapped charge distributions in oxides subjected to static and dynamic stress conditions have been measured. The DC distributions have been related to the oxide reliability and explained in terms of a microscopic degradation model. These results are extrapolated to the dynamic case. © 1997 Elsevier Science Ltd.

U2 - 10.1016/S0026-2714(97)00098-X

DO - 10.1016/S0026-2714(97)00098-X

M3 - Article

SN - 0026-2714

VL - 37

SP - 1517

EP - 1520

JO - Microelectronics Reliability

JF - Microelectronics Reliability

ER -

Analysis of the evolution of the trapped charge distributions in 10nm SiO<inf>2</inf> films during DC and bipolar dynamic stress

Abstract

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