Analysis of the evolution of the trapped charge distributions in 10nm SiO<inf>2</inf> films during DC and bipolar dynamic stress

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    Abstract

    The trapped charge distributions in oxides subjected to static and dynamic stress conditions have been measured. The DC distributions have been related to the oxide reliability and explained in terms of a microscopic degradation model. These results are extrapolated to the dynamic case. © 1997 Elsevier Science Ltd.
    Original languageEnglish
    Pages (from-to)1517-1520
    JournalMicroelectronics Reliability
    Volume37
    DOIs
    Publication statusPublished - 1 Jan 1997

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