Analysis of the degradation and breakdown of thin SiO<inf>2</inf> films under static and dynamic tests using a two-step stress procedure

Rosana Rodriguez, Montserrat Nafria Maqueda, E. Miranda, J. Suñé, X. Aymerich

    Research output: Contribution to journalArticleResearchpeer-review

    9 Citations (Scopus)

    Abstract

    A two-step stress test is used to analyze the degradation and breakdown of thin SiO2 films. The procedure directly relates the degradation of the oxide to the breakdown statistics, without the need of any assumption about the microscopic degradation mechanism. It partially overcomes the problems associated to dynamic tests and allows the direct comparison of different tests (static and dynamic). The evolution of the degradation of 8-nm thick oxides subjected to constant-voltage (CVS), constant-current (CCS), and bipolar square voltage stresses is analyzed using the two-step stress method. The results are compared with those of conventional breakdown tests to show the feasibility of the procedure. Our test procedure is also used to study the degradation of 4-nm thick oxides when subjected to CCS. The obtained results suggest that the two-step stress test will also be a powerful tool to analyze the degradation of ultra-thin oxides.
    Original languageEnglish
    Pages (from-to)2138-2145
    JournalIEEE Transactions on Electron Devices
    Volume47
    DOIs
    Publication statusPublished - 1 Nov 2000

    Fingerprint Dive into the research topics of 'Analysis of the degradation and breakdown of thin SiO<inf>2</inf> films under static and dynamic tests using a two-step stress procedure'. Together they form a unique fingerprint.

    Cite this