© 2015 Elsevier B.V. The resistive switching phenomenon is analyzed using a purposely developed setup which allows fast ramped voltages and measurements in the time domain. Taking advantage of these capabilities, the Set and Reset processes in Ni/HfO2 structures have been studied for a large range of voltage ramp speeds. The results obtained show that Set and Reset voltages increase with voltage ramp speed. The use of time domain measurements has allowed concluding that a critical energy is needed to trigger the Set and Reset processes, independently of the biasing conditions.
- Fast ramped voltages
- Metal-insulator-semiconductor (MIS)
- Resistive switching random access memory (RRAM)
- Time domain measurements