Analysis of set and reset mechanisms in Ni/HfO<inf>2</inf>-based RRAM with fast ramped voltages

M. Maestro, J. Martin-Martinez, J. Diaz, A. Crespo-Yepes, M. B. Gonzalez, R. Rodriguez, F. Campabadal, M. Nafria, X. Aymerich

Research output: Contribution to journalArticleResearchpeer-review

18 Citations (Scopus)

Abstract

© 2015 Elsevier B.V. The resistive switching phenomenon is analyzed using a purposely developed setup which allows fast ramped voltages and measurements in the time domain. Taking advantage of these capabilities, the Set and Reset processes in Ni/HfO2 structures have been studied for a large range of voltage ramp speeds. The results obtained show that Set and Reset voltages increase with voltage ramp speed. The use of time domain measurements has allowed concluding that a critical energy is needed to trigger the Set and Reset processes, independently of the biasing conditions.
Original languageEnglish
Pages (from-to)176-179
JournalMicroelectronic Engineering
Volume147
DOIs
Publication statusPublished - 1 Nov 2015

Keywords

  • Fast ramped voltages
  • Metal-insulator-semiconductor (MIS)
  • Resistive switching random access memory (RRAM)
  • Time domain measurements

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