Analysis of GeH<inf>4</inf> and GeF<inf>4</inf> as gaseous feed materials for germanium implantation

A. Ferreiro, J. du Port de Pontcharra, C. Jaussad, E. Lora-Tamayo

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    Abstract

    This paper reports the analysis of GeH4 and GeF4 as gaseous feed materials for Ge+ implantation. The study of this spectra, carried out with the help of the implanter analyser magnet, reveals the tremendous importance of their chemical differences. The tetrafluoride is found to be superior since (a) it does not produce any solid deposit that blocks the gas entrance, (b) it enables any desired germanium isotope to be implanted without risking the introduction of any other element, and (c) it produces ion intensities 6-10 times higher than the monogermane. © 1989.
    Original languageEnglish
    Pages (from-to)775-779
    JournalVacuum
    Volume39
    Issue number7-8
    DOIs
    Publication statusPublished - 1 Jan 1989

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    Ferreiro, A., du Port de Pontcharra, J., Jaussad, C., & Lora-Tamayo, E. (1989). Analysis of GeH<inf>4</inf> and GeF<inf>4</inf> as gaseous feed materials for germanium implantation. Vacuum, 39(7-8), 775-779. https://doi.org/10.1016/0042-207X(89)90035-3