Aluminium implantation at high energy is a key issue for development of SiC device fabrication technology. The computer simulation as well as an extensive process characterisation are necessary to control and optimise the p-type doping. 6H-SiC samples are implanted with an Al dose of 3e13 cm-2at 0.5, 1 and 2 MeV. SIMS, RBS and Raman measurements have been performed to characterise impurity profiles and damage levels. The results are corroborated with Monte Carlo simulations.
|Journal||Materials Science Forum|
|Issue number||PART 2|
|Publication status||Published - 1 Dec 1998|
- Ion implantation
Mestres, N., El Mekki, M. B., Campos, F. J., Pascual, J., Morvan, E., Godignon, P., Millán, J., & Lulli, G. (1998). Analysis of aluminum ion implantation damage into 6H-SiC epilayers. Materials Science Forum, 264-268(PART 2), 733-736.