Analysis of aluminum ion implantation damage into 6H-SiC epilayers

N. Mestres; M. Ben El Mekki; F. J. Campos; J. Pascual; E. Morvan; P. Godignon; J. Millán; G. Lulli

Analysis of aluminum ion implantation damage into 6H-SiC epilayers

N. Mestres, M. Ben El Mekki, F. J. Campos, J. Pascual, E. Morvan, P. Godignon, J. Millán, G. Lulli

Department of Physics

Research output: Contribution to journal › Article › Research › peer-review

7 Citations (Scopus)

Abstract

Aluminium implantation at high energy is a key issue for development of SiC device fabrication technology. The computer simulation as well as an extensive process characterisation are necessary to control and optimise the p-type doping. 6H-SiC samples are implanted with an Al dose of 3e13 cm-2at 0.5, 1 and 2 MeV. SIMS, RBS and Raman measurements have been performed to characterise impurity profiles and damage levels. The results are corroborated with Monte Carlo simulations.

Original language	English
Pages (from-to)	733-736
Journal	Materials Science Forum
Volume	264-268
Issue number	PART 2
Publication status	Published - 1 Dec 1998

Keywords

Ion implantation
Raman
RBS
SIMS
Simulation

Cite this

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title = "Analysis of aluminum ion implantation damage into 6H-SiC epilayers",

abstract = "Aluminium implantation at high energy is a key issue for development of SiC device fabrication technology. The computer simulation as well as an extensive process characterisation are necessary to control and optimise the p-type doping. 6H-SiC samples are implanted with an Al dose of 3e13 cm-2at 0.5, 1 and 2 MeV. SIMS, RBS and Raman measurements have been performed to characterise impurity profiles and damage levels. The results are corroborated with Monte Carlo simulations.",

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T1 - Analysis of aluminum ion implantation damage into 6H-SiC epilayers

AU - Mestres, N.

AU - El Mekki, M. Ben

AU - Campos, F. J.

AU - Pascual, J.

AU - Morvan, E.

AU - Godignon, P.

AU - Millán, J.

AU - Lulli, G.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Aluminium implantation at high energy is a key issue for development of SiC device fabrication technology. The computer simulation as well as an extensive process characterisation are necessary to control and optimise the p-type doping. 6H-SiC samples are implanted with an Al dose of 3e13 cm-2at 0.5, 1 and 2 MeV. SIMS, RBS and Raman measurements have been performed to characterise impurity profiles and damage levels. The results are corroborated with Monte Carlo simulations.

AB - Aluminium implantation at high energy is a key issue for development of SiC device fabrication technology. The computer simulation as well as an extensive process characterisation are necessary to control and optimise the p-type doping. 6H-SiC samples are implanted with an Al dose of 3e13 cm-2at 0.5, 1 and 2 MeV. SIMS, RBS and Raman measurements have been performed to characterise impurity profiles and damage levels. The results are corroborated with Monte Carlo simulations.

KW - Ion implantation

KW - Raman

KW - RBS

KW - SIMS

KW - Simulation

M3 - Article

VL - 264-268

SP - 733

EP - 736

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

IS - PART 2

ER -

Analysis of aluminum ion implantation damage into 6H-SiC epilayers

Abstract

Keywords

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