Abstract
Aluminium implantation at high energy is a key issue for development of SiC device fabrication technology. The computer simulation as well as an extensive process characterisation are necessary to control and optimise the p-type doping. 6H-SiC samples are implanted with an Al dose of 3e13 cm-2at 0.5, 1 and 2 MeV. SIMS, RBS and Raman measurements have been performed to characterise impurity profiles and damage levels. The results are corroborated with Monte Carlo simulations.
Original language | English |
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Pages (from-to) | 733-736 |
Journal | Materials Science Forum |
Volume | 264-268 |
Issue number | PART 2 |
Publication status | Published - 1 Dec 1998 |
Keywords
- Ion implantation
- Raman
- RBS
- SIMS
- Simulation