Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown

E. Miranda, T. Kawanago, K. Kakushima, J. Suñé, H. Iwai

Research output: Contribution to journal › Article › Research › peer-review

2 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown'. Together they form a unique fingerprint.

Physics & Astronomy