Analog and digital circuit functionality under the influence of gate oxide degradation and breakdown

R. Rodríguez; R. Fernández; M. Nafría; X. Aymerich; Lucas M. Simon Noah T. Andre; Javier Martin Martinez

Analog and digital circuit functionality under the influence of gate oxide degradation and breakdown

R. Rodríguez, R. Fernández, M. Nafría, X. Aymerich, Lucas M. Simon Noah T. Andre (Editor), Javier Martin Martinez

Department of Electronic Engineering

Research output: Chapter in Book › Chapter › Research

Original language	English
Title of host publication	MOSFETs: Properties, Preparations and Performance
Place of Publication	Londres (GB)
Pages	401-419
Number of pages	18
Edition	1
Publication status	Published - 1 Jan 2008

Cite this

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title = "Analog and digital circuit functionality under the influence of gate oxide degradation and breakdown",

author = "R. Rodr{\'i}guez and R. Fern{\'a}ndez and M. Nafr{\'i}a and X. Aymerich and {Noah T. Andre}, {Lucas M. Simon} and {Martin Martinez}, Javier",

year = "2008",

month = jan,

day = "1",

language = "English",

isbn = "978-1-60456-762-5",

pages = "401--419",

booktitle = "MOSFETs: Properties, Preparations and Performance",

edition = "1",

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Analog and digital circuit functionality under the influence of gate oxide degradation and breakdown. / Rodríguez, R.; Fernández, R.; Nafría, M.; Aymerich, X.; Noah T. Andre, Lucas M. Simon (Editor); Martin Martinez, Javier.

MOSFETs: Properties, Preparations and Performance. 1. ed. Londres (GB), 2008. p. 401-419.

Research output: Chapter in Book › Chapter › Research

TY - CHAP

T1 - Analog and digital circuit functionality under the influence of gate oxide degradation and breakdown

AU - Rodríguez, R.

AU - Fernández, R.

AU - Nafría, M.

AU - Aymerich, X.

AU - Martin Martinez, Javier

A2 - Noah T. Andre, Lucas M. Simon

PY - 2008/1/1

Y1 - 2008/1/1

M3 - Chapter

SN - 978-1-60456-762-5

SP - 401

EP - 419

BT - MOSFETs: Properties, Preparations and Performance

CY - Londres (GB)

ER -