An in-depth study of thermal effects in reset transitions in HfO<inf>2</inf> based RRAMs

M. A. Villena; M. B. González; J. B. Roldán; F. Campabadal; F. Jiménez-Molinos; F. M. Gómez-Campos; J. Suñé

doi:10.1016/j.sse.2015.04.008

An in-depth study of thermal effects in reset transitions in HfO<inf>2</inf> based RRAMs

M. A. Villena, M. B. González, J. B. Roldán, F. Campabadal, F. Jiménez-Molinos, F. M. Gómez-Campos, J. Suñé

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

39 Citations (Scopus)

Abstract

© 2015 Elsevier Ltd. All rights reserved. Reset transitions in HfO2 based RRAMs operated at different temperatures have been studied. Ni/HfO2/Si-n+ devices were fabricated and measured at temperatures ranging from 233 K to 473 K to characterize their reset features. In addition, a simulator including several coupled conductive filaments, series resistance and quantum effects was employed to analyze the same devices. The experimental results were correctly reproduced. It was found that the reset voltage and current show slight temperature dependence. To explain this fact, the roles of the out-diffusion of metallic species from the conductive filament and its conductance temperature dependence have been studied by simulation. The different conductive filament resistance components are also analyzed in the temperature range employed in our study. Finally, the thermal change in the energy barrier linked to quantum effects in the transport properties in the filament is modeled.

Original language	English
Pages (from-to)	47-51
Journal	Solid-State Electronics
Volume	111
DOIs	https://doi.org/10.1016/j.sse.2015.04.008
Publication status	Published - 17 May 2015

Keywords

Device simulation
Quantum effects
RRAMs
Thermal effects

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10.1016/j.sse.2015.04.008

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title = "An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs",

abstract = "{\textcopyright} 2015 Elsevier Ltd. All rights reserved. Reset transitions in HfO2 based RRAMs operated at different temperatures have been studied. Ni/HfO2/Si-n+ devices were fabricated and measured at temperatures ranging from 233 K to 473 K to characterize their reset features. In addition, a simulator including several coupled conductive filaments, series resistance and quantum effects was employed to analyze the same devices. The experimental results were correctly reproduced. It was found that the reset voltage and current show slight temperature dependence. To explain this fact, the roles of the out-diffusion of metallic species from the conductive filament and its conductance temperature dependence have been studied by simulation. The different conductive filament resistance components are also analyzed in the temperature range employed in our study. Finally, the thermal change in the energy barrier linked to quantum effects in the transport properties in the filament is modeled.",

keywords = "Device simulation, Quantum effects, RRAMs, Thermal effects",

author = "Villena, {M. A.} and Gonz{\'a}lez, {M. B.} and Rold{\'a}n, {J. B.} and F. Campabadal and F. Jim{\'e}nez-Molinos and G{\'o}mez-Campos, {F. M.} and J. Su{\~n}{\'e}",

year = "2015",

month = may,

day = "17",

doi = "10.1016/j.sse.2015.04.008",

language = "English",

volume = "111",

pages = "47--51",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs

AU - Villena, M. A.

AU - González, M. B.

AU - Roldán, J. B.

AU - Campabadal, F.

AU - Jiménez-Molinos, F.

AU - Gómez-Campos, F. M.

AU - Suñé, J.

PY - 2015/5/17

Y1 - 2015/5/17

N2 - © 2015 Elsevier Ltd. All rights reserved. Reset transitions in HfO2 based RRAMs operated at different temperatures have been studied. Ni/HfO2/Si-n+ devices were fabricated and measured at temperatures ranging from 233 K to 473 K to characterize their reset features. In addition, a simulator including several coupled conductive filaments, series resistance and quantum effects was employed to analyze the same devices. The experimental results were correctly reproduced. It was found that the reset voltage and current show slight temperature dependence. To explain this fact, the roles of the out-diffusion of metallic species from the conductive filament and its conductance temperature dependence have been studied by simulation. The different conductive filament resistance components are also analyzed in the temperature range employed in our study. Finally, the thermal change in the energy barrier linked to quantum effects in the transport properties in the filament is modeled.

AB - © 2015 Elsevier Ltd. All rights reserved. Reset transitions in HfO2 based RRAMs operated at different temperatures have been studied. Ni/HfO2/Si-n+ devices were fabricated and measured at temperatures ranging from 233 K to 473 K to characterize their reset features. In addition, a simulator including several coupled conductive filaments, series resistance and quantum effects was employed to analyze the same devices. The experimental results were correctly reproduced. It was found that the reset voltage and current show slight temperature dependence. To explain this fact, the roles of the out-diffusion of metallic species from the conductive filament and its conductance temperature dependence have been studied by simulation. The different conductive filament resistance components are also analyzed in the temperature range employed in our study. Finally, the thermal change in the energy barrier linked to quantum effects in the transport properties in the filament is modeled.

KW - Device simulation

KW - Quantum effects

KW - RRAMs

KW - Thermal effects

U2 - 10.1016/j.sse.2015.04.008

DO - 10.1016/j.sse.2015.04.008

M3 - Article

SN - 0038-1101

VL - 111

SP - 47

EP - 51

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

An in-depth study of thermal effects in reset transitions in HfO<inf>2</inf> based RRAMs

Abstract

Keywords

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