An in-depth description of bipolar resistive switching in Cu/HfO <inf>x</inf> /Pt devices, a 3D kinetic Monte Carlo simulation approach

S. Aldana, J. B. Roldán, P. García-Fernández, J. Suñe, R. Romero-Zaliz, F. Jiménez-Molinos, S. Long, F. Gómez-Campos, M. Liu

Research output: Contribution to journalArticleResearchpeer-review

11 Citations (Scopus)

Abstract

© 2018 Author(s). A simulation tool based on a 3D kinetic Monte Carlo algorithm has been employed to analyse bipolar conductive bridge RAMs fabricated with Cu/HfOx/Pt stacks. Resistive switching mechanisms are described accounting for the electric field and temperature distributions within the dielectric. The formation and destruction of conductive filaments (CFs) are analysed taking into consideration redox reactions and the joint action of metal ion thermal diffusion and electric field induced drift. Filamentary conduction is considered when different percolation paths are formed in addition to other conventional transport mechanisms in dielectrics. The simulator was tuned by using the experimental data for Cu/HfOx/Pt bipolar devices that were fabricated. Our simulation tool allows for the study of different experimental results, in particular, the current variations due to the electric field changes between the filament tip and the electrode in the High Resistance State. In addition, the density of metallic atoms within the CF can also be characterized along with the corresponding CF resistance description.
Original languageEnglish
Article number154501
JournalJournal of Applied Physics
Volume123
Issue number15
DOIs
Publication statusPublished - 21 Apr 2018

Fingerprint

Dive into the research topics of 'An in-depth description of bipolar resistive switching in Cu/HfO <inf>x</inf> /Pt devices, a 3D kinetic Monte Carlo simulation approach'. Together they form a unique fingerprint.

Cite this