An Accurate and Verilog-A Compatible Compact Model for Graphene Field-Effect Transistors

Gerhard Martin Landauer, David Jimenez, Jose Luis Gonzalez

Research output: Contribution to journalArticleResearchpeer-review

51 Citations (Scopus)


© 2002-2012 IEEE. The present paper provides an accurate drift-diffusion model of the graphene field-effect transistor (GFET). A precise yet mathematically simple current-voltage relation is derived by focusing on device physics at energy levels close to the Dirac point. With respect to previous work, our approach extends modeling accuracy to the low-voltage biasing regime and improves the prediction of current saturation. These advantages are highlighted by a comparison study of the drain current, transconductance, output conductance, and intrinsic gain. The model has been implemented in Verilog-A and is compatible with conventional circuit simulators. It is provided as a tool for the exploration of GFET-based integrated circuit design. The model shows good agreement with measurement data from GFET prototypes.
Original languageEnglish
Article number6825842
Pages (from-to)895-904
JournalIEEE Transactions on Nanotechnology
Issue number5
Publication statusPublished - 1 Sep 2014


  • Electric potential
  • Graphene
  • Integrated circuit modeling
  • Logic gates
  • Mathematical model
  • Quantum capacitance


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