Aging in CMOS RF linear power amplifiers: Experimental comparison and modeling

Xavier Aragones, Diego Mateo, Enrique Barajas, Albert Crespo-Yepes, Rosana Rodríguez, Javier Martin-Martinez, Montserrat Nafría

Research output: Book/ReportProceedingResearchpeer-review

6 Citations (Scopus)


This paper characterizes experimentally the aging degradation experienced by two different 2.45 GHz power amplifier circuits of similar performance, implemented in a 65 nm CMOS technology. Results demonstrate the importance of the topology selection in order to guarantee robustness against aging effects, and thus the need to predict MOS parameter degradation during the design phase, accounting for the actual DC and RF operation conditions. For that purpose, we propose a semi-empirical compact model that, based on the RMS equivalent voltages at the transistor terminals during circuit operation, can provide an estimation of the aging degradation.

Original languageEnglish
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728103976
Publication statusPublished - 2019

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310


  • Aging
  • Power amplifier
  • Reliability
  • RF


Dive into the research topics of 'Aging in CMOS RF linear power amplifiers: Experimental comparison and modeling'. Together they form a unique fingerprint.

Cite this