Advanced electrical-level modeling of EEPROM cells

Massimo Lanzoni, Piero Olive, Bruno Riccò, Jordi Suñé

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25 Citations (Scopus)

Abstract

Conventional modeling of floating-gate EEPROM cells is shown to be inadequate to correctly evaluate the tunnel current flowing through the MOS injector during programming, essentially because of relevant quantum phenomena taking place at the cathode semiconductor-oxide interface. An electrical-level model is developed and discussed incorporating numerical analysis of such effects. The model is validated by comparing results of the simulations with experimental data obtained with EEPROM cells. The model of the MOS injector has been implemented in the circuit simulator SPICE. © 1993 IEEE
Original languageEnglish
Pages (from-to)951-957
JournalIEEE Transactions on Electron Devices
Volume40
DOIs
Publication statusPublished - 1 Jan 1993

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    Lanzoni, M., Olive, P., Riccò, B., & Suñé, J. (1993). Advanced electrical-level modeling of EEPROM cells. IEEE Transactions on Electron Devices, 40, 951-957. https://doi.org/10.1109/16.210204