Accurate deterministic numerical simulation of p-n junctions

P. González, A. Godoy, F. Gámiz, J. A. Carrillo

Research output: Contribution to journalArticleResearchpeer-review

4 Citations (Scopus)

Abstract

In this work some variants of a deterministic simulation of p-n junctions are considered. From a mathematical point of view, this will be done by means of the numerical resolution of the corresponding Boltzmann transport's equations (BTE's): one for the electrons and another one for the holes, coupled by the Poisson equation for the potential, from which the electric field is calculated. In order to improve the efficiency of the Finite-Difference Weighted Essentially Non-Oscillatory (FD-WENO) code, we will consider the two transport equations in the depletion zone and only the corresponding BTE equation for the majority carrier in each one of the neutral zones, instead of solving the two BTE's in the entire length of the device. © Springer Science + Business Media, Inc. 2004.
Original languageEnglish
Pages (from-to)235-238
JournalJournal of Computational Electronics
Volume3
Issue number3-4
DOIs
Publication statusPublished - 1 Oct 2004

Keywords

  • Bipolar devices
  • Boltzmann-Poisson system
  • FD-WENO methods
  • P-n junctions

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