Accurate assessment of the time-to-failure of hyper-thin gate oxides subjected to constant electrical stress using a logistic-type model

F. Palumbo, E. Miranda, S. Lombardo

Research output: Contribution to journalArticleResearch

2 Citations (Scopus)
Original languageEnglish
Pages (from-to)166-169
JournalMicroelectronic Engineering
Volume80
DOIs
Publication statusPublished - 1 Jan 2005

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