Original language | Undefined/Unknown |
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Place of Publication | San Diego (US) |
Number of pages | 0 |
Publication status | Published - Jun 1998 |
Abstracts of the 29th IEEE Semniconductor Interfase Specialists Conference. "Modeling of Soft Breakdown I-V characteristic in <5nm Gate Oxides". Abstracts of the 29th IEEE Semniconductor Interfase Specialists Conference.
E. Miranda, J. Suñé, R. Rodríguez, M. Nafría, X. Aymerich, IEEE Electron Devices Society (Editor)
Research output: Book/Report › Proceeding › Research