Abstracts of the 29th IEEE Semniconductor Interfase Specialists Conference. "Modeling of Soft Breakdown I-V characteristic in <5nm Gate Oxides". Abstracts of the 29th IEEE Semniconductor Interfase Specialists Conference.

E. Miranda, J. Suñé, R. Rodríguez, M. Nafría, X. Aymerich, IEEE Electron Devices Society (Editor)

    Research output: Book/ReportProceedingResearch

    Original languageUndefined/Unknown
    Place of PublicationSan Diego (US)
    Number of pages0
    Publication statusPublished - Jun 1998

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