Original language | English |
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Pages (from-to) | 1074-1078 |
Journal | Materials Science and Technology |
Issue number | 11 |
Publication status | Published - 1 Jan 1995 |
Ability of capacitance-voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors
S. Dueñas, E. Castan, L. Quintanilla, L. Enríquez, J. Barbolla, E. Lora-Tamayo, J. Montserrat
Research output: Contribution to journal › Article › Research
2
Citations
(Scopus)