Ability of capacitance-voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors

S. Dueñas, E. Castan, L. Quintanilla, L. Enríquez, J. Barbolla, E. Lora-Tamayo, J. Montserrat

Research output: Contribution to journalArticleResearch

2 Citations (Scopus)
Original languageEnglish
Pages (from-to)1074-1078
JournalMater. sci. technol.
Issue number11
Publication statusPublished - 1 Jan 1995

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