Ability of capacitance-voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors

S. Dueñas; E. Castan; L. Quintanilla; L. Enríquez; J. Barbolla; E. Lora-Tamayo; J. Montserrat

Ability of capacitance-voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors

S. Dueñas, E. Castan, L. Quintanilla, L. Enríquez, J. Barbolla, E. Lora-Tamayo, J. Montserrat

Department of Physics

Research output: Contribution to journal › Article › Research

Original language	English
Pages (from-to)	1074-1078
Journal	Materials Science and Technology
Issue number	11
Publication status	Published - 1 Jan 1995

Cite this

@article{dd65b0f2a7cd46898a9d0598fa8856d4,

title = "Ability of capacitance-voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors",

author = "S. Due{\~n}as and E. Castan and L. Quintanilla and L. Enr{\'i}quez and J. Barbolla and E. Lora-Tamayo and J. Montserrat",

year = "1995",

month = jan,

day = "1",

language = "English",

pages = "1074--1078",

number = "11",

}

TY - JOUR

T1 - Ability of capacitance-voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors

AU - Dueñas, S.

AU - Castan, E.

AU - Quintanilla, L.

AU - Enríquez, L.

AU - Barbolla, J.

AU - Lora-Tamayo, E.

AU - Montserrat, J.

PY - 1995/1/1

Y1 - 1995/1/1

M3 - Article

SP - 1074

EP - 1078

IS - 11

ER -