A thorough investigation of the progressive reset dynamics in HfO<inf>2</inf>-based resistive switching structures

P. Lorenzi, R. Rao, F. Irrera, J. Suñé, E. Miranda

Research output: Contribution to journalArticleResearchpeer-review

Abstract

© 2015 AIP Publishing LLC. According to previous reports, filamentary electron transport in resistive switching HfO2-based metal-insulator-metal structures can be modeled using a diode-like conduction mechanism with a series resistance. Taking the appropriate limits, the model allows simulating the high (HRS) and low (LRS) resistance states of the devices in terms of exponential and linear current-voltage relationships, respectively. In this letter, we show that this simple equivalent circuit approach can be extended to represent the progressive reset transition between the LRS and HRS if a generalized logistic growth model for the pre-exponential diode current factor is considered. In this regard, it is demonstrated here that a Verhulst logistic model does not provide accurate results. The reset dynamics is interpreted as the sequential deactivation of multiple conduction channels spanning the dielectric film. Fitting results for the current-voltage characteristics indicate that the voltage sweep rate only affects the deactivation rate of the filaments without altering the main features of the switching dynamics.
Original languageEnglish
Article number113507
JournalApplied Physics Letters
Volume107
Issue number11
DOIs
Publication statusPublished - 14 Sep 2015

Fingerprint Dive into the research topics of 'A thorough investigation of the progressive reset dynamics in HfO<inf>2</inf>-based resistive switching structures'. Together they form a unique fingerprint.

  • Cite this