A technology for the monolithic fabrication of a pressure sensor and related circuitry

C. Cané, F. Campabadal, J. Esteve, M. Lozano, A. Götz, J. Santander, Ch Burrer, J. A. Plaza, L. Pahun, S. Marco

Research output: Contribution to journalArticleResearchpeer-review

10 Citations (Scopus)

Abstract

A simple technology for the monolithic fabrication of piezoresistive pressure sensors and signal-conditioning circuitry is presented. The proposed methodology is based on the partition of the complete process into three main blocks: pre-processing steps, related to the sensor structure, standard CMOS technology and post-processing, corresponding to wafer backside etching. The feasibility of the presented technology is demonstrated by the results obtained from the characterization of the sensor devices, circuits and sensor-circuit combination that have been designed, fabricated and tested. In addition, the results obtained from a complete set of technological test structures show no significant effect of the additional processing on the characteristics of the standard CMOS technology. © 1994, All rights reserved.
Original languageEnglish
Pages (from-to)133-136
Journal"Sensors and Actuators, A: Physical"
Volume46
Issue number1-3
DOIs
Publication statusPublished - 1 Jan 1995

Keywords

  • CMOS
  • Pressure sensors

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