A technology for the monolithic fabrication of a pressure sensor and related circuitry

C. Cané; F. Campabadal; J. Esteve; M. Lozano; A. Götz; J. Santander; Ch Burrer; J. A. Plaza; L. Pahun; S. Marco

doi:10.1016/0924-4247(94)00876-J

A technology for the monolithic fabrication of a pressure sensor and related circuitry

C. Cané, F. Campabadal, J. Esteve, M. Lozano, A. Götz, J. Santander, Ch Burrer, J. A. Plaza, L. Pahun, S. Marco

Department of Physics

Research output: Contribution to journal › Article › Research › peer-review

10 Citations (Scopus)

Abstract

A simple technology for the monolithic fabrication of piezoresistive pressure sensors and signal-conditioning circuitry is presented. The proposed methodology is based on the partition of the complete process into three main blocks: pre-processing steps, related to the sensor structure, standard CMOS technology and post-processing, corresponding to wafer backside etching. The feasibility of the presented technology is demonstrated by the results obtained from the characterization of the sensor devices, circuits and sensor-circuit combination that have been designed, fabricated and tested. In addition, the results obtained from a complete set of technological test structures show no significant effect of the additional processing on the characteristics of the standard CMOS technology. © 1994, All rights reserved.

Original language	English
Pages (from-to)	133-136
Journal	"Sensors and Actuators, A: Physical"
Volume	46
Issue number	1-3
DOIs	https://doi.org/10.1016/0924-4247(94)00876-J
Publication status	Published - 1 Jan 1995

Keywords

CMOS
Pressure sensors

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title = "A technology for the monolithic fabrication of a pressure sensor and related circuitry",

abstract = "A simple technology for the monolithic fabrication of piezoresistive pressure sensors and signal-conditioning circuitry is presented. The proposed methodology is based on the partition of the complete process into three main blocks: pre-processing steps, related to the sensor structure, standard CMOS technology and post-processing, corresponding to wafer backside etching. The feasibility of the presented technology is demonstrated by the results obtained from the characterization of the sensor devices, circuits and sensor-circuit combination that have been designed, fabricated and tested. In addition, the results obtained from a complete set of technological test structures show no significant effect of the additional processing on the characteristics of the standard CMOS technology. {\textcopyright} 1994, All rights reserved.",

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A technology for the monolithic fabrication of a pressure sensor and related circuitry. / Cané, C.; Campabadal, F.; Esteve, J.; Lozano, M.; Götz, A.; Santander, J.; Burrer, Ch; Plaza, J. A.; Pahun, L.; Marco, S.

In: "Sensors and Actuators, A: Physical", Vol. 46, No. 1-3, 01.01.1995, p. 133-136.

Research output: Contribution to journal › Article › Research › peer-review

TY - JOUR

T1 - A technology for the monolithic fabrication of a pressure sensor and related circuitry

AU - Cané, C.

AU - Campabadal, F.

AU - Esteve, J.

AU - Lozano, M.

AU - Götz, A.

AU - Santander, J.

AU - Burrer, Ch

AU - Plaza, J. A.

AU - Pahun, L.

AU - Marco, S.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - A simple technology for the monolithic fabrication of piezoresistive pressure sensors and signal-conditioning circuitry is presented. The proposed methodology is based on the partition of the complete process into three main blocks: pre-processing steps, related to the sensor structure, standard CMOS technology and post-processing, corresponding to wafer backside etching. The feasibility of the presented technology is demonstrated by the results obtained from the characterization of the sensor devices, circuits and sensor-circuit combination that have been designed, fabricated and tested. In addition, the results obtained from a complete set of technological test structures show no significant effect of the additional processing on the characteristics of the standard CMOS technology. © 1994, All rights reserved.

AB - A simple technology for the monolithic fabrication of piezoresistive pressure sensors and signal-conditioning circuitry is presented. The proposed methodology is based on the partition of the complete process into three main blocks: pre-processing steps, related to the sensor structure, standard CMOS technology and post-processing, corresponding to wafer backside etching. The feasibility of the presented technology is demonstrated by the results obtained from the characterization of the sensor devices, circuits and sensor-circuit combination that have been designed, fabricated and tested. In addition, the results obtained from a complete set of technological test structures show no significant effect of the additional processing on the characteristics of the standard CMOS technology. © 1994, All rights reserved.

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