Abstract
In this article, the integration into a single measurement system of device level and nanoscale measurement equipment is presented and applied to the electrical characterization of emerging electron devices. This system is a smart solution to simplify the test procedure, since it allows a fast switching between measurement modes (device or nanoscale level), also featuring an enlarged testing capability. Key in the system is a custom-made inkjet-printed circuit board (I-PCB) that connects the device terminals to the proper instrumentation. The flexibility offered by inkjet-printing technologies is a clear advantage, since many kinds of devices can be tested, without the need of expensive hardware modifications. As a particular case of study, the proposed strategy is demonstrated by implementing a system that alternates between standard electrical measurements with a Semiconductor Parameter Analyzer (SPA) and Conductive Atomic Force Microscopy (CAFM) nanoscale measurements on back-gate graphene field-effect transistors.
Original language | English |
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Pages (from-to) | 28-35 |
Number of pages | 8 |
Journal | IEEE Transactions on Nanotechnology |
Volume | 22 |
DOIs | |
Publication status | Published - 1 Jan 2023 |
Keywords
- CAFM
- electrical measurements
- graphene transistor
- HCI degradation
- Ink-jet printing