A robust and automated methodology for the analysis of Time-Dependent Variability at transistor level

P. Saraza-Canflanca*, J. Diaz-Fortuny, R. Castro-Lopez, E. Roca, J. Martin-Martinez, R. Rodriguez, M. Nafria, F. V. Fernandez

*Corresponding author for this work

Research output: Contribution to journalArticleResearchpeer-review

5 Citations (Scopus)

Abstract

In the past few years, Time-Dependent Variability has become a subject of growing concern in CMOS technologies. In particular, phenomena such as Bias Temperature Instability, Hot-Carrier Injection and Random Telegraph Noise can largely affect circuit reliability. It becomes therefore imperative to develop reliability-aware design tools to mitigate their impact on circuits. To this end, these phenomena must be first accurately characterized and modeled. And, since all these phenomena reveal a stochastic nature for deeply-scaled integration technologies, they must be characterized massively on devices to extract the probability distribution functions associated to their characteristic parameters. In this work, a complete methodology to characterize these phenomena experimentally, and then extract the necessary parameters to construct a Time-Dependent Variability model, is presented. This model can be used by a reliability simulator.

Original languageEnglish
Pages (from-to)13-20
Number of pages8
JournalIntegration
Volume72
DOIs
Publication statusPublished - May 2020

Keywords

  • Bias temperature instability
  • BTI
  • Characterization
  • CMOS
  • HCI
  • Hot-carrier injection
  • Random telegraph noise
  • Reliability
  • RTN
  • Simulation
  • TDV
  • Time-dependent variability

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