A procedure for the determination of the effective mobility in an N-MOSFET in the Moderate Inversion Region

J. Banqueri, J.A. López-Villanueva, F. Gámiz, J.E. Carceller, E. Lora-Tamayo, M. Lozano

Research output: Contribution to journalArticleResearch

2 Citations (Scopus)
Original languageEnglish
Pages (from-to)1-1
JournalSolid-state electronics
Volume39
Publication statusPublished - 1 Jan 1996

Cite this

Banqueri, J., López-Villanueva, J. A., Gámiz, F., Carceller, J. E., Lora-Tamayo, E., & Lozano, M. (1996). A procedure for the determination of the effective mobility in an N-MOSFET in the Moderate Inversion Region. Solid-state electronics, 39, 1-1.