A physics-based model of gate-tunable metal-graphene contact resistance benchmarked against experimental data

Ferney A. Chaves, David Jiménez, Abhay A. Sagade, Wonjae Kim, Juha Riikonen, Harri Lipsanen, Daniel Neumaier

Research output: Contribution to journalArticleResearchpeer-review

16 Citations (Scopus)

Abstract

© 2015 IOP Publishing Ltd. Metal-graphene contact resistance is a technological bottleneck in the realization of viable graphenebased electronics.Wereport a model that is useful for finding the gate-tunable components of this resistance, determined by the tunneling of carriers between the 3D metal and 2D graphene underneath, followed by Klein tunneling to the graphene in the channel. This model quantifies the intrinsic factors that control that resistance, including the effect of unintended chemical doping. Our results agree with experimental results for several metals.
Original languageEnglish
Article number025006
Journal2D Materials
Volume2
DOIs
Publication statusPublished - 12 May 2015

Keywords

  • Contact resistance
  • Contact resistivity
  • Graphene
  • Graphene field-effect-transistor
  • Metal-graphene junction

Fingerprint Dive into the research topics of 'A physics-based model of gate-tunable metal-graphene contact resistance benchmarked against experimental data'. Together they form a unique fingerprint.

  • Cite this