A physics-based model of gate-tunable metal-graphene contact resistance benchmarked against experimental data

Ferney A. Chaves; David Jiménez; Abhay A. Sagade; Wonjae Kim; Juha Riikonen; Harri Lipsanen; Daniel Neumaier

doi:https://doi.org/10.1088/2053-1583/2/2/025006

A physics-based model of gate-tunable metal-graphene contact resistance benchmarked against experimental data

Ferney A. Chaves, David Jiménez, Abhay A. Sagade, Wonjae Kim, Juha Riikonen, Harri Lipsanen, Daniel Neumaier

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

30 Citations (Scopus)

Abstract

© 2015 IOP Publishing Ltd. Metal-graphene contact resistance is a technological bottleneck in the realization of viable graphenebased electronics.Wereport a model that is useful for finding the gate-tunable components of this resistance, determined by the tunneling of carriers between the 3D metal and 2D graphene underneath, followed by Klein tunneling to the graphene in the channel. This model quantifies the intrinsic factors that control that resistance, including the effect of unintended chemical doping. Our results agree with experimental results for several metals.

Original language	English
Article number	025006
Journal	2D Materials
Volume	2
DOIs	https://doi.org/10.1088/2053-1583/2/2/025006
Publication status	Published - 12 May 2015

Keywords

Contact resistance
Contact resistivity
Graphene
Graphene field-effect-transistor
Metal-graphene junction

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https://doi.org/10.1088/2053-1583/2/2/025006

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abstract = "{\textcopyright} 2015 IOP Publishing Ltd. Metal-graphene contact resistance is a technological bottleneck in the realization of viable graphenebased electronics.Wereport a model that is useful for finding the gate-tunable components of this resistance, determined by the tunneling of carriers between the 3D metal and 2D graphene underneath, followed by Klein tunneling to the graphene in the channel. This model quantifies the intrinsic factors that control that resistance, including the effect of unintended chemical doping. Our results agree with experimental results for several metals.",

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AU - Chaves, Ferney A.

AU - Jiménez, David

AU - Sagade, Abhay A.

AU - Kim, Wonjae

AU - Riikonen, Juha

AU - Lipsanen, Harri

AU - Neumaier, Daniel

PY - 2015/5/12

Y1 - 2015/5/12

N2 - © 2015 IOP Publishing Ltd. Metal-graphene contact resistance is a technological bottleneck in the realization of viable graphenebased electronics.Wereport a model that is useful for finding the gate-tunable components of this resistance, determined by the tunneling of carriers between the 3D metal and 2D graphene underneath, followed by Klein tunneling to the graphene in the channel. This model quantifies the intrinsic factors that control that resistance, including the effect of unintended chemical doping. Our results agree with experimental results for several metals.

AB - © 2015 IOP Publishing Ltd. Metal-graphene contact resistance is a technological bottleneck in the realization of viable graphenebased electronics.Wereport a model that is useful for finding the gate-tunable components of this resistance, determined by the tunneling of carriers between the 3D metal and 2D graphene underneath, followed by Klein tunneling to the graphene in the channel. This model quantifies the intrinsic factors that control that resistance, including the effect of unintended chemical doping. Our results agree with experimental results for several metals.

KW - Contact resistance

KW - Contact resistivity

KW - Graphene

KW - Graphene field-effect-transistor

KW - Metal-graphene junction

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VL - 2

JO - 2D Materials

JF - 2D Materials

M1 - 025006

ER -

A physics-based model of gate-tunable metal-graphene contact resistance benchmarked against experimental data

Abstract

Keywords

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