A Physical Model for the Statistics of the Set Switching Time of Resistive RAM Measured with the Width-Adjusting Pulse Operation Method

Meiyun Zhang, Guoming Wang, Shibing Long, Zhaoan Yu, Yang Li, Dinglin Xu, Hangbing Lv, Qi Liu, Enrique Miranda, Jordi Suñé, Ming Liu

Research output: Contribution to journalArticleResearchpeer-review

13 Citations (Scopus)

Abstract

© 2015 IEEE. The correlation between the set time (tset) and the initial off-state resistance (ROFF) statistics for a Ti/ZrO2/Pt bipolar resistive random access memory device was investigated. The width-adjusting pulse operation method, which can significantly improve the switching uniformity, was used to accurately measure tset, and the gathered statistical data were analyzed using Weibull distributions. Both the Weibull slope (βt) and the scale factor (tset63%) of tset distributions were found to increase logarithmically with ROFF. The observed tset - ROFF interdependence provides a guideline in improving the switching uniformity and optimizing the tradeoff between set speed and disturb immunity. An analytical cell-based model was developed to explain the ROFF-dependent tSET statistics, which can be implemented in statistical compact models and circuit simulators for improving RRAM cell design and memory performances.
Original languageEnglish
Article number7307111
Pages (from-to)1303-1306
JournalIEEE Electron Device Letters
Volume36
Issue number12
DOIs
Publication statusPublished - 1 Dec 2015

Keywords

  • Resistive random access memory
  • set time
  • speed-disturb dilemma
  • statistics
  • Weibull distribution
  • widthadjusting pulse operation

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