A novel approach to quantum point contact for post soft breakdown conduction

A. Cester, L. Bandiera, J. Suñe, L. Boschiero, G. Ghidini, A. Paccagnella

    Research output: Contribution to journalArticleResearchpeer-review

    16 Citations (Scopus)

    Abstract

    A new approach based on Quantum Point Contact (QPC) is presented to describe the electrical characteristics of Soft Breakdown in electrically stressed MOS capacitors. By using the new analytical model it is possible to extrapolate the barrier profile of the SB spot from experimental Ig-Vg curves. Barrier height and width are the two representative parameters of the barrier. Results obtained for a variety of oxide thickness and gate areas show that the SB current can be controlled either by the barrier width or barrier height depending on the leakage intensity.
    Original languageEnglish
    Pages (from-to)305-308
    JournalTechnical Digest-International Electron Devices Meeting
    DOIs
    Publication statusPublished - 1 Jan 2001

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