A new approach based on Quantum Point Contact (QPC) is presented to describe the electrical characteristics of Soft Breakdown in electrically stressed MOS capacitors. By using the new analytical model it is possible to extrapolate the barrier profile of the SB spot from experimental Ig-Vg curves. Barrier height and width are the two representative parameters of the barrier. Results obtained for a variety of oxide thickness and gate areas show that the SB current can be controlled either by the barrier width or barrier height depending on the leakage intensity.
|Journal||Technical Digest-International Electron Devices Meeting|
|Publication status||Published - 1 Jan 2001|