A noise and RTN-removal smart method for parameters extraction of CMOS aging compact models

Javier Diaz-Fortuny, Javier Martin-Martinez, Rosana Rodriguez, Montserrat Nafria, Rafael Castro-Lopez, Elisenda Roca, Francisco V. Fernandez

Research output: Book/ReportProceedingResearchpeer-review

5 Citations (Scopus)

Abstract

This work presents a new method to statistically characterize the emission times and threshold voltage shifts (ΔVth) related to oxide defects in nanometer CMOS transistors during aging tests. The method identifies the Vth drops associated to oxide trap emissions during BTI and HCI aging recovery traces while removing RTN and background noise contributions, to avoid artifacts during data analysis.

Original languageEnglish
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)9781538648117
DOIs
Publication statusPublished - 3 May 2018

Publication series

Name2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
Volume2018-January

Keywords

  • aging
  • BTI
  • CMOS
  • defects
  • extraction
  • HCI
  • method
  • parameters
  • RTN

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