This work presents a new method to statistically characterize the emission times and threshold voltage shifts (ΔVth) related to oxide defects in nanometer CMOS transistors during aging tests. The method identifies the Vth drops associated to oxide trap emissions during BTI and HCI aging recovery traces while removing RTN and background noise contributions, to avoid artifacts during data analysis.
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||4|
|Publication status||Published - 3 May 2018|
|Name||2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018|