A new model for the post-breakdown conductance of MOS devices based on the generalized diode equation

Research output: Contribution to journal › Article › Research

Original language	English
Pages (from-to)	598-599
Journal	IEEE International Reliability Physics Symposium proceedings
DOIs	https://doi.org/10.1109/RELPHY.2005.1493161
Publication status	Published - 1 Jan 2005

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@article{c3b681bbb1824d7fa57260db19c7b55c,

title = "A new model for the post-breakdown conductance of MOS devices based on the generalized diode equation",

author = "E. Miranda and {Miranda Castellano}, {Enrique Alberto}",

year = "2005",

month = jan,

day = "1",

doi = "10.1109/RELPHY.2005.1493161",

language = "English",

pages = "598--599",

}