A new approach to the modeling of oxide breakdown on CMOS circuits

Research output: Contribution to journal › Article › Research

Original language	English
Pages (from-to)	1519-1522
Journal	Microelectronic Reliability
Volume	44
DOIs	https://doi.org/10.1016/j.microrel.2004.07.026
Publication status	Published - 1 Oct 2004

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@article{9ddff186cb734f30a5195f0d08d6cf7a,

title = "A new approach to the modeling of oxide breakdown on CMOS circuits",

author = "R. Fern{\'a}ndez and R. Rodr{\'i}guez and M. Nafria and X. Aymerich",

year = "2004",

month = oct,

day = "1",

doi = "10.1016/j.microrel.2004.07.026",

language = "English",

volume = "44",

pages = "1519--1522",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - A new approach to the modeling of oxide breakdown on CMOS circuits

AU - Fernández, R.

AU - Rodríguez, R.

AU - Nafria, M.

AU - Aymerich, X.

PY - 2004/10/1

Y1 - 2004/10/1

U2 - 10.1016/j.microrel.2004.07.026

DO - 10.1016/j.microrel.2004.07.026

M3 - Article

VL - 44

SP - 1519

EP - 1522

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

ER -