A nanoscale approach to the electrical properties of MOS memory devices with Si-nanocrystals

M. Porti, M. Avidano, M. Nafría, X. Aymerich, J. Carreras, B. Garrido

Research output: Contribution to journal › Article › Research

2 Citations (Scopus)

Original language	English
Pages (from-to)	268-271
Journal	Microelectronic Engineering
Volume	80
DOIs	https://doi.org/10.1016/j.mee.2005.04.079
Publication status	Published - 1 Jan 2005

Access to Document

@article{0dae22693eea4a22b7b1360652846928,

title = "A nanoscale approach to the electrical properties of MOS memory devices with Si-nanocrystals",

author = "M. Porti and M. Avidano and M. Nafr{\'i}a and X. Aymerich and J. Carreras and B. Garrido",

year = "2005",

month = jan,

day = "1",

doi = "10.1016/j.mee.2005.04.079",

language = "English",

volume = "80",

pages = "268--271",

}