A nanoscale approach to the electrical properties of MOS memory devices with Si-nanocrystals

M. Porti, M. Avidano, M. Nafría, X. Aymerich, J. Carreras, B. Garrido

Research output: Contribution to journalArticleResearch

2 Citations (Scopus)
Original languageEnglish
Pages (from-to)268-271
JournalMicroelectronic Engineering
Volume80
DOIs
Publication statusPublished - 1 Jan 2005

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