A nanoscale approach to the electrical properties of MOS memory devices with Si-nanocrystals

M. Porti, M. Avidano, M. Nafría, X. Aymerich, J. Carreras, B. Garrido

Research output: Contribution to journal › Article › Research

2 Citations (Scopus)

Original language	English
Pages (from-to)	268-271
Journal	Microelectronic Engineering
Volume	80
DOIs	https://doi.org/10.1016/j.mee.2005.04.079
Publication status	Published - 1 Jan 2005

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title = "A nanoscale approach to the electrical properties of MOS memory devices with Si-nanocrystals",

author = "M. Porti and M. Avidano and M. Nafr{\'i}a and X. Aymerich and J. Carreras and B. Garrido",

year = "2005",

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day = "1",

doi = "10.1016/j.mee.2005.04.079",

language = "English",

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pages = "268--271",

journal = "Microelectronic Engineering",

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T1 - A nanoscale approach to the electrical properties of MOS memory devices with Si-nanocrystals

AU - Porti, M.

AU - Avidano, M.

AU - Nafría, M.

AU - Aymerich, X.

AU - Carreras, J.

AU - Garrido, B.

PY - 2005/1/1

Y1 - 2005/1/1

U2 - 10.1016/j.mee.2005.04.079

DO - 10.1016/j.mee.2005.04.079

M3 - Article

VL - 80

SP - 268

EP - 271

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -