Original language | English |
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Pages (from-to) | 268-271 |
Journal | Microelectronic Engineering |
Volume | 80 |
DOIs | |
Publication status | Published - 1 Jan 2005 |
A nanoscale approach to the electrical properties of MOS memory devices with Si-nanocrystals
M. Porti, M. Avidano, M. Nafría, X. Aymerich, J. Carreras, B. Garrido
Research output: Contribution to journal › Article › Research
2
Citations
(Scopus)