A model for the set statistics of rram inspired in the percolation model of oxide breakdown

Shibing Long, Xiaojuan Lian, Carlo Cagli, Luca Perniola, Enrique Miranda, Ming Liu, Jordi Suñé

Research output: Contribution to journalArticleResearchpeer-review

116 Citations (Scopus)

Abstract

The set voltage distribution of Pt/HfO2/Pt resistive switching memory is shown to fit well a Weibull model with Weibull slope and scale factor increasing logarithmically with the resistance measured at the set point. Gaining inspiration from the percolation model of oxide breakdown, a physics-based model for the Vset statistics is proposed. The results of the model are completely consistent with the experimental results and demonstrate the need of a strong reset to get large Weibull slope that provides some relief to the strong requirements imposed by the set speed-read disturb dilemma. © 2013 IEEE.
Original languageEnglish
Article number6553216
Pages (from-to)999-1001
JournalIEEE Electron Device Letters
Volume34
Issue number8
DOIs
Publication statusPublished - 7 Aug 2013

Keywords

  • Resistive random access memory (RRAM)
  • resistive switching
  • set voltage statistics

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