A model for the set statistics of rram inspired in the percolation model of oxide breakdown

Shibing Long; Xiaojuan Lian; Carlo Cagli; Luca Perniola; Enrique Miranda; Ming Liu; Jordi Suñé

doi:10.1109/LED.2013.2266332

A model for the set statistics of rram inspired in the percolation model of oxide breakdown

Shibing Long, Xiaojuan Lian, Carlo Cagli, Luca Perniola, Enrique Miranda, Ming Liu, Jordi Suñé

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

116 Citations (Scopus)

Abstract

The set voltage distribution of Pt/HfO2/Pt resistive switching memory is shown to fit well a Weibull model with Weibull slope and scale factor increasing logarithmically with the resistance measured at the set point. Gaining inspiration from the percolation model of oxide breakdown, a physics-based model for the Vset statistics is proposed. The results of the model are completely consistent with the experimental results and demonstrate the need of a strong reset to get large Weibull slope that provides some relief to the strong requirements imposed by the set speed-read disturb dilemma. © 2013 IEEE.

Original language	English
Article number	6553216
Pages (from-to)	999-1001
Journal	IEEE Electron Device Letters
Volume	34
Issue number	8
DOIs	https://doi.org/10.1109/LED.2013.2266332
Publication status	Published - 7 Aug 2013

Keywords

Resistive random access memory (RRAM)
resistive switching
set voltage statistics

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title = "A model for the set statistics of rram inspired in the percolation model of oxide breakdown",

abstract = "The set voltage distribution of Pt/HfO2/Pt resistive switching memory is shown to fit well a Weibull model with Weibull slope and scale factor increasing logarithmically with the resistance measured at the set point. Gaining inspiration from the percolation model of oxide breakdown, a physics-based model for the Vset statistics is proposed. The results of the model are completely consistent with the experimental results and demonstrate the need of a strong reset to get large Weibull slope that provides some relief to the strong requirements imposed by the set speed-read disturb dilemma. {\textcopyright} 2013 IEEE.",

keywords = "Resistive random access memory (RRAM), resistive switching, set voltage statistics",

author = "Shibing Long and Xiaojuan Lian and Carlo Cagli and Luca Perniola and Enrique Miranda and Ming Liu and Jordi Su{\~n}{\'e}",

year = "2013",

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doi = "10.1109/LED.2013.2266332",

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T1 - A model for the set statistics of rram inspired in the percolation model of oxide breakdown

AU - Long, Shibing

AU - Lian, Xiaojuan

AU - Cagli, Carlo

AU - Perniola, Luca

AU - Miranda, Enrique

AU - Liu, Ming

AU - Suñé, Jordi

PY - 2013/8/7

Y1 - 2013/8/7

N2 - The set voltage distribution of Pt/HfO2/Pt resistive switching memory is shown to fit well a Weibull model with Weibull slope and scale factor increasing logarithmically with the resistance measured at the set point. Gaining inspiration from the percolation model of oxide breakdown, a physics-based model for the Vset statistics is proposed. The results of the model are completely consistent with the experimental results and demonstrate the need of a strong reset to get large Weibull slope that provides some relief to the strong requirements imposed by the set speed-read disturb dilemma. © 2013 IEEE.

AB - The set voltage distribution of Pt/HfO2/Pt resistive switching memory is shown to fit well a Weibull model with Weibull slope and scale factor increasing logarithmically with the resistance measured at the set point. Gaining inspiration from the percolation model of oxide breakdown, a physics-based model for the Vset statistics is proposed. The results of the model are completely consistent with the experimental results and demonstrate the need of a strong reset to get large Weibull slope that provides some relief to the strong requirements imposed by the set speed-read disturb dilemma. © 2013 IEEE.

KW - Resistive random access memory (RRAM)

KW - resistive switching

KW - set voltage statistics

U2 - 10.1109/LED.2013.2266332

DO - 10.1109/LED.2013.2266332

M3 - Article

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EP - 1001

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

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M1 - 6553216

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