Abstract
The set voltage distribution of Pt/HfO2/Pt resistive switching memory is shown to fit well a Weibull model with Weibull slope and scale factor increasing logarithmically with the resistance measured at the set point. Gaining inspiration from the percolation model of oxide breakdown, a physics-based model for the Vset statistics is proposed. The results of the model are completely consistent with the experimental results and demonstrate the need of a strong reset to get large Weibull slope that provides some relief to the strong requirements imposed by the set speed-read disturb dilemma. © 2013 IEEE.
Original language | English |
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Article number | 6553216 |
Pages (from-to) | 999-1001 |
Journal | IEEE Electron Device Letters |
Volume | 34 |
Issue number | 8 |
DOIs | |
Publication status | Published - 7 Aug 2013 |
Keywords
- Resistive random access memory (RRAM)
- resistive switching
- set voltage statistics