Abstract
The effect of oxide breakdown (BD) on the performance of CMOS Inverters has been investigated. The results show that the inverter performance can be affected by the BD in a different way depending on the stress polarity applied to the inverter input. In all the cases, the oxide BD conduction has been modeled as gate-to-diffusion leakage with a power-law formula of the type I = KVp, which was previously found to describe the BD in capacitor structures. This implies that the BD physics at oxide level is the same as that at circuit level.
Original language | English |
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Pages (from-to) | 114-116 |
Journal | IEEE Electron Device Letters |
Volume | 24 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1 Feb 2003 |
Keywords
- CMOS
- Dielectric breakdown
- Hard breakdown (HBD)
- Leakage currents
- Oxide breakdown
- Oxide reliability