A Generalized drift-diffusion model for rectifying schottky contact simulation

Fabio Lorenzo Traversa, Francesco Bertazzi, Fabrizio Bonani, Simona Donati Guerrieri, Giovanni Ghione, Susana Perez, Javier Mateos, Tomás Gonzalez

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Abstract

We present a discussion on the modeling of Schottky barrier rectifying contacts (diodes) within the framework of partial-differential-equation-based physical simulations. We propose a physically consistent generalization of the drift-diffusion model to describe the boundary layer close to the Schottky barrier where thermionic emission leads to a non-Maxwellian carrier distribution, including a novel boundary condition at the contact. The modified drift-diffusion model is validated against Monte Carlo simulations of a GaAs device. The proposed model is in agreement with the Monte Carlo simulations not only in the current value but also in the spatial distributions of microscopic quantities like the electron velocity and concentration. © 2006 IEEE.
Original languageEnglish
Article number5462889
Pages (from-to)1539-1547
JournalIEEE Transactions on Electron Devices
Volume57
Issue number7
DOIs
Publication statusPublished - 1 Jul 2010

Keywords

  • schottky barriers
  • semiconductor device modeling

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    Traversa, F. L., Bertazzi, F., Bonani, F., Donati Guerrieri, S., Ghione, G., Perez, S., Mateos, J., & Gonzalez, T. (2010). A Generalized drift-diffusion model for rectifying schottky contact simulation. IEEE Transactions on Electron Devices, 57(7), 1539-1547. [5462889]. https://doi.org/10.1109/TED.2010.2047909