A function-fit model for the hard breakdown I-V characteristics of ultra-thin oxides in MOS structures

E. Miranda, B. Brandala

Research output: Contribution to journalArticleResearchpeer-review

1 Citation (Scopus)

Abstract

A function-fit model for the hard breakdown current-voltage characteristics of ultra-thin oxides in metal-oxide-semiconductor structures based on the smoothing function concept is presented. The model is intended to capture the diode-like and resistance-like behaviours observed at low and high applied biases, respectively, by means of a simple, continuous and derivable function. These features make the proposed expression suited for circuit simulation environments. The effect of temperature on the model parameters is also analysed. © 2004 Elsevier Ltd. All rights reserved.
Original languageEnglish
Pages (from-to)175-178
JournalMicroelectronics Reliability
Volume45
Issue number1
DOIs
Publication statusPublished - 1 Jan 2005

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