A function-fit model for the hard breakdown I-V characteristics of ultra-thin oxides in MOS structures

E. Miranda; B. Brandala

doi:10.1016/j.microrel.2004.08.003

A function-fit model for the hard breakdown I-V characteristics of ultra-thin oxides in MOS structures

E. Miranda, B. Brandala

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

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Abstract

A function-fit model for the hard breakdown current-voltage characteristics of ultra-thin oxides in metal-oxide-semiconductor structures based on the smoothing function concept is presented. The model is intended to capture the diode-like and resistance-like behaviours observed at low and high applied biases, respectively, by means of a simple, continuous and derivable function. These features make the proposed expression suited for circuit simulation environments. The effect of temperature on the model parameters is also analysed. © 2004 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	175-178
Journal	Microelectronics Reliability
Volume	45
Issue number	1
DOIs	https://doi.org/10.1016/j.microrel.2004.08.003
Publication status	Published - 1 Jan 2005

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title = "A function-fit model for the hard breakdown I-V characteristics of ultra-thin oxides in MOS structures",

abstract = "A function-fit model for the hard breakdown current-voltage characteristics of ultra-thin oxides in metal-oxide-semiconductor structures based on the smoothing function concept is presented. The model is intended to capture the diode-like and resistance-like behaviours observed at low and high applied biases, respectively, by means of a simple, continuous and derivable function. These features make the proposed expression suited for circuit simulation environments. The effect of temperature on the model parameters is also analysed. {\textcopyright} 2004 Elsevier Ltd. All rights reserved.",

author = "E. Miranda and B. Brandala",

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AU - Brandala, B.

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N2 - A function-fit model for the hard breakdown current-voltage characteristics of ultra-thin oxides in metal-oxide-semiconductor structures based on the smoothing function concept is presented. The model is intended to capture the diode-like and resistance-like behaviours observed at low and high applied biases, respectively, by means of a simple, continuous and derivable function. These features make the proposed expression suited for circuit simulation environments. The effect of temperature on the model parameters is also analysed. © 2004 Elsevier Ltd. All rights reserved.

AB - A function-fit model for the hard breakdown current-voltage characteristics of ultra-thin oxides in metal-oxide-semiconductor structures based on the smoothing function concept is presented. The model is intended to capture the diode-like and resistance-like behaviours observed at low and high applied biases, respectively, by means of a simple, continuous and derivable function. These features make the proposed expression suited for circuit simulation environments. The effect of temperature on the model parameters is also analysed. © 2004 Elsevier Ltd. All rights reserved.

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DO - 10.1016/j.microrel.2004.08.003

M3 - Article

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EP - 178

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 1

ER -

A function-fit model for the hard breakdown I-V characteristics of ultra-thin oxides in MOS structures

Abstract

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