TY - BOOK
T1 - A flexible characterization methodology of RRAM
T2 - Application to the modelling of the conductivity changes and their variability
AU - Pedro, M.
AU - Martin-Martinez, J.
AU - Rodriguez, R.
AU - Nafria, M.
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/5/3
Y1 - 2018/5/3
N2 - In this work, an automatic measurement setup, which allows a massive electrical characterization of RRAM with pulsed voltages, is presented. The evaluation of the G-V characteristics under single-pulse test-schemes is introduced as an example of application for neuromorphic engineering, where the fine analog control of the device conductivity state is required by inducing small changes in each iteration. To describe the obtained data, a time-independent compact model for memristive devices is used as inspiration. The model provided in the present work allows including device-level variability in the simulation, and considers the device electrical history. Both factors are key for further simulations of RRAM-based crossbar arrays, and the evaluation of the variability impact on their performance.
AB - In this work, an automatic measurement setup, which allows a massive electrical characterization of RRAM with pulsed voltages, is presented. The evaluation of the G-V characteristics under single-pulse test-schemes is introduced as an example of application for neuromorphic engineering, where the fine analog control of the device conductivity state is required by inducing small changes in each iteration. To describe the obtained data, a time-independent compact model for memristive devices is used as inspiration. The model provided in the present work allows including device-level variability in the simulation, and considers the device electrical history. Both factors are key for further simulations of RRAM-based crossbar arrays, and the evaluation of the variability impact on their performance.
KW - Automatic Setup
KW - Conductivity Control
KW - Massive Characterization
KW - Modelling
KW - RRAM
KW - Variability
UR - http://www.scopus.com/inward/record.url?scp=85050906145&partnerID=8YFLogxK
U2 - 10.1109/ULIS.2018.8354729
DO - 10.1109/ULIS.2018.8354729
M3 - Proceeding
AN - SCOPUS:85050906145
T3 - 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
BT - A flexible characterization methodology of RRAM
PB - Institute of Electrical and Electronics Engineers Inc.
ER -