In this work, an automatic measurement setup, which allows a massive electrical characterization of RRAM with pulsed voltages, is presented. The evaluation of the G-V characteristics under single-pulse test-schemes is introduced as an example of application for neuromorphic engineering, where the fine analog control of the device conductivity state is required by inducing small changes in each iteration. To describe the obtained data, a time-independent compact model for memristive devices is used as inspiration. The model provided in the present work allows including device-level variability in the simulation, and considers the device electrical history. Both factors are key for further simulations of RRAM-based crossbar arrays, and the evaluation of the variability impact on their performance.