Abstract
A microcantilever based platform for mass detection in the femtogram range has been integrated in the doped top silicon layer of a SOI substrate. The on-plane fundamental resonance mode of the cantilever is excited electrostatically and detected capacitively by means of two parallel placed electrodes in a two port configuration. An electromechanical model of the cantilever-electrodes transducer and its implementation in a SPICE environment are presented. The model takes into account non-linearities from variable cantilever-electrode gap, fringing field contributions and real deflection shape of the cantilever for the calculation of the driving electrostatic force. A fitting of the model to the measured S21 transmitted power frequency response is performed to extract the characteristic sensor parameters as Young modulus, Q factor, electrical parasitics and mass responsivity. © 2006 Elsevier B.V. All rights reserved.
Original language | English |
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Pages (from-to) | 800-807 |
Journal | Ultramicroscopy |
Volume | 106 |
DOIs | |
Publication status | Published - 1 Jun 2006 |
Keywords
- Cantilever based sensors
- Electromechanical model
- NEMS
- Resonance frequency