A drain current model for Schottky-barrier CNT-FETs

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Abstract

We present here a physics-based drain current model for Schottky-barrier carbon nanotube field-effect transistors. The model captures a number of features exhibited by these transistors such as thermionic and tunnel emission, ambipolar conduction, ballistic transport, multimode propagation and electrostatics dominated by the nanotube capacitance. © Springer Science+Business Media LLC 2007.
Original languageEnglish
Pages (from-to)361-364
JournalJournal of Computational Electronics
Volume5
DOIs
Publication statusPublished - 1 Dec 2006

Keywords

  • Carbon nanotubes
  • Compact model
  • Field effect transistor

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