Abstract
We present here a physics-based drain current model for Schottky-barrier carbon nanotube field-effect transistors. The model captures a number of features exhibited by these transistors such as thermionic and tunnel emission, ambipolar conduction, ballistic transport, multimode propagation and electrostatics dominated by the nanotube capacitance. © Springer Science+Business Media LLC 2007.
Original language | English |
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Pages (from-to) | 361-364 |
Journal | Journal of Computational Electronics |
Volume | 5 |
DOIs | |
Publication status | Published - 1 Dec 2006 |
Keywords
- Carbon nanotubes
- Compact model
- Field effect transistor