A drain current model for Schottky-barrier CNT-FETs

David Jiménez; Xavier Cartoixà; Enrique Miranda; Jordi Suñé; Ferney Alveiro Chaves; Stephan Roche

doi:https://doi.org/10.1007/s10825-006-0022-9

A drain current model for Schottky-barrier CNT-FETs

David Jiménez, Xavier Cartoixà, Enrique Miranda, Jordi Suñé, Ferney Alveiro Chaves, Stephan Roche

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

5 Citations (Scopus)

Abstract

We present here a physics-based drain current model for Schottky-barrier carbon nanotube field-effect transistors. The model captures a number of features exhibited by these transistors such as thermionic and tunnel emission, ambipolar conduction, ballistic transport, multimode propagation and electrostatics dominated by the nanotube capacitance. © Springer Science+Business Media LLC 2007.

Original language	English
Pages (from-to)	361-364
Journal	Journal of Computational Electronics
Volume	5
DOIs	https://doi.org/10.1007/s10825-006-0022-9
Publication status	Published - 1 Dec 2006

Keywords

Carbon nanotubes
Compact model
Field effect transistor

Access to Document

https://doi.org/10.1007/s10825-006-0022-9

Fingerprint Dive into the research topics of 'A drain current model for Schottky-barrier CNT-FETs'. Together they form a unique fingerprint.

Cite this

Jiménez, D., Cartoixà, X., Miranda, E., Suñé, J., Chaves, F. A., & Roche, S. (2006). A drain current model for Schottky-barrier CNT-FETs. Journal of Computational Electronics, 5, 361-364. https://doi.org/10.1007/s10825-006-0022-9

@article{9aa795a06cf64a21a3b1d659cc365086,

title = "A drain current model for Schottky-barrier CNT-FETs",

abstract = "We present here a physics-based drain current model for Schottky-barrier carbon nanotube field-effect transistors. The model captures a number of features exhibited by these transistors such as thermionic and tunnel emission, ambipolar conduction, ballistic transport, multimode propagation and electrostatics dominated by the nanotube capacitance. {\textcopyright} Springer Science+Business Media LLC 2007.",

keywords = "Carbon nanotubes, Compact model, Field effect transistor",

author = "David Jim{\'e}nez and Xavier Cartoix{\`a} and Enrique Miranda and Jordi Su{\~n}{\'e} and Chaves, {Ferney Alveiro} and Stephan Roche",

year = "2006",

month = dec,

day = "1",

doi = "https://doi.org/10.1007/s10825-006-0022-9",

language = "English",

volume = "5",

pages = "361--364",

journal = "Journal of Computational Electronics",

issn = "1569-8025",

}

TY - JOUR

T1 - A drain current model for Schottky-barrier CNT-FETs

AU - Jiménez, David

AU - Cartoixà, Xavier

AU - Miranda, Enrique

AU - Suñé, Jordi

AU - Chaves, Ferney Alveiro

AU - Roche, Stephan

PY - 2006/12/1

Y1 - 2006/12/1

N2 - We present here a physics-based drain current model for Schottky-barrier carbon nanotube field-effect transistors. The model captures a number of features exhibited by these transistors such as thermionic and tunnel emission, ambipolar conduction, ballistic transport, multimode propagation and electrostatics dominated by the nanotube capacitance. © Springer Science+Business Media LLC 2007.

AB - We present here a physics-based drain current model for Schottky-barrier carbon nanotube field-effect transistors. The model captures a number of features exhibited by these transistors such as thermionic and tunnel emission, ambipolar conduction, ballistic transport, multimode propagation and electrostatics dominated by the nanotube capacitance. © Springer Science+Business Media LLC 2007.

KW - Carbon nanotubes

KW - Compact model

KW - Field effect transistor

U2 - https://doi.org/10.1007/s10825-006-0022-9

DO - https://doi.org/10.1007/s10825-006-0022-9

M3 - Article

VL - 5

SP - 361

EP - 364

JO - Journal of Computational Electronics

JF - Journal of Computational Electronics

SN - 1569-8025

ER -