A Direct Solver for 2D Non-Stationary Boltzmann-Poisson Systems for Semiconductor Devices: A MESFET Simulation by WENO-Boltzmann Schemes

José A. Carrillo, Irene M. Gamba, Armando Majorana, Chi Wang Shu

Research output: Contribution to journalArticleResearchpeer-review

29 Citations (Scopus)

Abstract

© 2003, Kluwer Academic Publishers. We present preliminary results of a high order WENO scheme applied to deterministic computations for two dimensional formulation of the transients for the Boltzmann-Poisson system describing electron transport in semiconductor devices. The collisional term models optical-phonon interactions which become dominant under strong energetic conditions corresponding to nanoscale active regions under applied bias. We treat the Boltzmann Transport equation in a spherical coordinate system for the wave-vector space. The problem is three dimensional in the wave-vector space and two dimensional in the physical space, plus the time variable driving to steady states. The new formulation avoids the singularity due to the spherical coordinate system.
Original languageEnglish
Pages (from-to)375-380
JournalJournal of Computational Electronics
Volume2
Issue number2-4
DOIs
Publication statusPublished - 1 Dec 2003

Keywords

  • Boltzmann-Poisson system for semiconductors
  • spherical coordinate system
  • WENO scheme

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