TY - BOOK
T1 - A contact resistance extraction method of 2D-FET technologies without test structures
AU - Pacheco-Sanchez, Anibal
AU - Jimenez, David
N1 - Funding Information:
This work has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreements No GrapheneCore2 785219 and No GrapheneCore3 881603, from Ministerio de Ciencia, Inno-vación y Universidades under grant agreement RTI2018-097876-B-C21(MCIU/AEI/FEDER, UE). This article has been partially funded by the European Regional Development Funds (ERDF) allocated to the Programa Operatiu FEDER de Catalunya 2014-2020, with the support of the Secretaria d’Universitats i Recerca of the Departament d’Empresa i Coneixement of the Generalitat de Catalunya for emerging technology clusters to carry out valorization and transfer of research results. Reference of the GraphCAT project: 001-P-001702.
Publisher Copyright:
© 2021 IEEE.
PY - 2021/6/9
Y1 - 2021/6/9
N2 - A Y-function based method (YFM) is used here to extract the contact resistance Rc of different two-dimensional (2D) field-effect transistor (FET) technologies. The methodology relies on individual transfer characteristics, at a single drain-to-source voltage, of devices from a same technology with different channel lengths. In contrast to the widely used transfer length method where a global-back gated test structure is required, the YFM presented here can be applied to 2D-FETs regardless the gate architecture. This method does not require the fabrication of dedicated test structures and hence it can be a useful and immediate tool for device characterization and scaling studies. R c is extracted here for graphene-, black phosphorus-, WS2 and MoS2-FETs using the proposed methodology and considering the mobility degradation coefficient in the underlying model. The extracted values are in good agreement with the ones obtained with other approaches. An accurate description of the experimental drain current and channel resistance is achieved by using the extracted parameters in the corresponding equation.
AB - A Y-function based method (YFM) is used here to extract the contact resistance Rc of different two-dimensional (2D) field-effect transistor (FET) technologies. The methodology relies on individual transfer characteristics, at a single drain-to-source voltage, of devices from a same technology with different channel lengths. In contrast to the widely used transfer length method where a global-back gated test structure is required, the YFM presented here can be applied to 2D-FETs regardless the gate architecture. This method does not require the fabrication of dedicated test structures and hence it can be a useful and immediate tool for device characterization and scaling studies. R c is extracted here for graphene-, black phosphorus-, WS2 and MoS2-FETs using the proposed methodology and considering the mobility degradation coefficient in the underlying model. The extracted values are in good agreement with the ones obtained with other approaches. An accurate description of the experimental drain current and channel resistance is achieved by using the extracted parameters in the corresponding equation.
KW - 2DFET
KW - black phosphorus
KW - contact resistance
KW - graphene
KW - mobility degradation
KW - MoS
KW - WS
UR - http://www.scopus.com/inward/record.url?scp=85114441452&partnerID=8YFLogxK
U2 - 10.1109/CDE52135.2021.9455755
DO - 10.1109/CDE52135.2021.9455755
M3 - Proceeding
AN - SCOPUS:85114441452
T3 - Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
BT - A contact resistance extraction method of 2D-FET technologies without test structures
PB - Institute of Electrical and Electronics Engineers Inc.
ER -