A conductive AFM nanoscale analysis of NBTI and channel hot-carrier degradation in MOSFETs

Qian Wu; Albin Bayerl; Marc Porti; Javier Martin-Martinez; Mario Lanza; Rosana Rodriguez; Vikas Velayudhan; Montserrat Nafria; Xavier Aymerich; Mireia Bargallo Gonzalez; Eddy Simoen

doi:10.1109/TED.2014.2341315

A conductive AFM nanoscale analysis of NBTI and channel hot-carrier degradation in MOSFETs

Qian Wu, Albin Bayerl, Marc Porti, Javier Martin-Martinez, Mario Lanza, Rosana Rodriguez, Vikas Velayudhan, Montserrat Nafria, Xavier Aymerich, Mireia Bargallo Gonzalez, Eddy Simoen

Research output: Contribution to journal › Article › Research › peer-review

6 Citations (Scopus)

Abstract

This paper addresses the impact of different electrical stresses on nanoscale electrical properties of the MOSFET gate dielectric. Using a conductive atomic force microscope (CAFM) for the first time, the gate oxide has been analyzed after bias temperature instability (BTI) and channel hot-carrier (CHC) stresses. The CAFM explicitly shows that while the degradation induced along the channel by a negative BTI stress is homogeneous, after a CHC stress different degradation levels can be distinguished, being higher close to source and drain. © 2014 IEEE.

Original language	English
Article number	6880443
Pages (from-to)	3118-3124
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	9
DOIs	https://doi.org/10.1109/TED.2014.2341315
Publication status	Published - 1 Jan 2014

Keywords

Atomic force microscopy (AFM)
channel hot-carrier (CHC) degradation
MOSFET
negative bias temperature instability (NBTI)

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10.1109/TED.2014.2341315

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Wu, Qian ; Bayerl, Albin ; Porti, Marc ; Martin-Martinez, Javier ; Lanza, Mario ; Rodriguez, Rosana ; Velayudhan, Vikas ; Nafria, Montserrat ; Aymerich, Xavier ; Gonzalez, Mireia Bargallo ; Simoen, Eddy. / A conductive AFM nanoscale analysis of NBTI and channel hot-carrier degradation in MOSFETs. In: IEEE Transactions on Electron Devices. 2014 ; Vol. 61, No. 9. pp. 3118-3124.

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title = "A conductive AFM nanoscale analysis of NBTI and channel hot-carrier degradation in MOSFETs",

abstract = "This paper addresses the impact of different electrical stresses on nanoscale electrical properties of the MOSFET gate dielectric. Using a conductive atomic force microscope (CAFM) for the first time, the gate oxide has been analyzed after bias temperature instability (BTI) and channel hot-carrier (CHC) stresses. The CAFM explicitly shows that while the degradation induced along the channel by a negative BTI stress is homogeneous, after a CHC stress different degradation levels can be distinguished, being higher close to source and drain. {\textcopyright} 2014 IEEE.",

keywords = "Atomic force microscopy (AFM), channel hot-carrier (CHC) degradation, MOSFET, negative bias temperature instability (NBTI)",

author = "Qian Wu and Albin Bayerl and Marc Porti and Javier Martin-Martinez and Mario Lanza and Rosana Rodriguez and Vikas Velayudhan and Montserrat Nafria and Xavier Aymerich and Gonzalez, {Mireia Bargallo} and Eddy Simoen",

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doi = "10.1109/TED.2014.2341315",

language = "English",

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A conductive AFM nanoscale analysis of NBTI and channel hot-carrier degradation in MOSFETs. / Wu, Qian; Bayerl, Albin; Porti, Marc ; Martin-Martinez, Javier; Lanza, Mario; Rodriguez, Rosana; Velayudhan, Vikas; Nafria, Montserrat ; Aymerich, Xavier; Gonzalez, Mireia Bargallo; Simoen, Eddy.

In: IEEE Transactions on Electron Devices, Vol. 61, No. 9, 6880443, 01.01.2014, p. 3118-3124.

Research output: Contribution to journal › Article › Research › peer-review

TY - JOUR

T1 - A conductive AFM nanoscale analysis of NBTI and channel hot-carrier degradation in MOSFETs

AU - Wu, Qian

AU - Bayerl, Albin

AU - Porti, Marc

AU - Martin-Martinez, Javier

AU - Lanza, Mario

AU - Rodriguez, Rosana

AU - Velayudhan, Vikas

AU - Nafria, Montserrat

AU - Aymerich, Xavier

AU - Gonzalez, Mireia Bargallo

AU - Simoen, Eddy

PY - 2014/1/1

Y1 - 2014/1/1

N2 - This paper addresses the impact of different electrical stresses on nanoscale electrical properties of the MOSFET gate dielectric. Using a conductive atomic force microscope (CAFM) for the first time, the gate oxide has been analyzed after bias temperature instability (BTI) and channel hot-carrier (CHC) stresses. The CAFM explicitly shows that while the degradation induced along the channel by a negative BTI stress is homogeneous, after a CHC stress different degradation levels can be distinguished, being higher close to source and drain. © 2014 IEEE.

AB - This paper addresses the impact of different electrical stresses on nanoscale electrical properties of the MOSFET gate dielectric. Using a conductive atomic force microscope (CAFM) for the first time, the gate oxide has been analyzed after bias temperature instability (BTI) and channel hot-carrier (CHC) stresses. The CAFM explicitly shows that while the degradation induced along the channel by a negative BTI stress is homogeneous, after a CHC stress different degradation levels can be distinguished, being higher close to source and drain. © 2014 IEEE.

KW - Atomic force microscopy (AFM)

KW - channel hot-carrier (CHC) degradation

KW - MOSFET

KW - negative bias temperature instability (NBTI)

U2 - 10.1109/TED.2014.2341315

DO - 10.1109/TED.2014.2341315

M3 - Article

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SP - 3118

EP - 3124

IS - 9

M1 - 6880443

ER -

A conductive AFM nanoscale analysis of NBTI and channel hot-carrier degradation in MOSFETs

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Keywords

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