This paper addresses the impact of different electrical stresses on nanoscale electrical properties of the MOSFET gate dielectric. Using a conductive atomic force microscope (CAFM) for the first time, the gate oxide has been analyzed after bias temperature instability (BTI) and channel hot-carrier (CHC) stresses. The CAFM explicitly shows that while the degradation induced along the channel by a negative BTI stress is homogeneous, after a CHC stress different degradation levels can be distinguished, being higher close to source and drain. © 2014 IEEE.
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 1 Jan 2014|
- Atomic force microscopy (AFM)
- channel hot-carrier (CHC) degradation
- negative bias temperature instability (NBTI)