A conductive AFM nanoscale analysis of NBTI and channel hot-carrier degradation in MOSFETs

Qian Wu, Albin Bayerl, Marc Porti, Javier Martin-Martinez, Mario Lanza, Rosana Rodriguez, Vikas Velayudhan, Montserrat Nafria, Xavier Aymerich, Mireia Bargallo Gonzalez, Eddy Simoen

Research output: Contribution to journalArticleResearchpeer-review

6 Citations (Scopus)

Abstract

This paper addresses the impact of different electrical stresses on nanoscale electrical properties of the MOSFET gate dielectric. Using a conductive atomic force microscope (CAFM) for the first time, the gate oxide has been analyzed after bias temperature instability (BTI) and channel hot-carrier (CHC) stresses. The CAFM explicitly shows that while the degradation induced along the channel by a negative BTI stress is homogeneous, after a CHC stress different degradation levels can be distinguished, being higher close to source and drain. © 2014 IEEE.
Original languageEnglish
Article number6880443
Pages (from-to)3118-3124
JournalIEEE Transactions on Electron Devices
Volume61
Issue number9
DOIs
Publication statusPublished - 1 Jan 2014

Keywords

  • Atomic force microscopy (AFM)
  • channel hot-carrier (CHC) degradation
  • MOSFET
  • negative bias temperature instability (NBTI)

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