Abstract
This paper addresses the impact of different electrical stresses on nanoscale electrical properties of the MOSFET gate dielectric. Using a conductive atomic force microscope (CAFM) for the first time, the gate oxide has been analyzed after bias temperature instability (BTI) and channel hot-carrier (CHC) stresses. The CAFM explicitly shows that while the degradation induced along the channel by a negative BTI stress is homogeneous, after a CHC stress different degradation levels can be distinguished, being higher close to source and drain. © 2014 IEEE.
Original language | English |
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Article number | 6880443 |
Pages (from-to) | 3118-3124 |
Journal | IEEE Transactions on Electron Devices |
Volume | 61 |
Issue number | 9 |
DOIs | |
Publication status | Published - 1 Jan 2014 |
Keywords
- Atomic force microscopy (AFM)
- channel hot-carrier (CHC) degradation
- MOSFET
- negative bias temperature instability (NBTI)