A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics

E. Amat; T. Kauerauf; R. Rodriguez; M. Nafria; X. Aymerich; R. Degraeve; G. Groeseneken

doi:10.1016/j.mee.2012.10.011

A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics

E. Amat, T. Kauerauf, R. Rodriguez, M. Nafria, X. Aymerich, R. Degraeve, G. Groeseneken

Research output: Contribution to journal › Article › Research › peer-review

17 Citations (Scopus)

Abstract

© 2012 Elsevier B.V. All rights reserved. This paper presents a comprehensive study on channel hot-carrier (CHC) degradation in short channel MOSFETs with high-k dielectric. Different reliability scenarios are analyzed, i.e., temperature influence, impact of high ID and dynamic operation conditions. To explain the CHC damage behavior in short channel devices, we divide the total CHC degradation in two components: the classical CHC damage located at drain side and the degradation produced by the voltage drop over the gate dielectric, which can be considered as bias temperature instability (BTI).

Original language	English
Pages (from-to)	144-149
Journal	Microelectronic Engineering
Volume	103
DOIs	https://doi.org/10.1016/j.mee.2012.10.011
Publication status	Published - 1 Jan 2013

Keywords

BTI
CMOS
High-k
Hot-carriers
Reliability

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10.1016/j.mee.2012.10.011

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abstract = "{\textcopyright} 2012 Elsevier B.V. All rights reserved. This paper presents a comprehensive study on channel hot-carrier (CHC) degradation in short channel MOSFETs with high-k dielectric. Different reliability scenarios are analyzed, i.e., temperature influence, impact of high ID and dynamic operation conditions. To explain the CHC damage behavior in short channel devices, we divide the total CHC degradation in two components: the classical CHC damage located at drain side and the degradation produced by the voltage drop over the gate dielectric, which can be considered as bias temperature instability (BTI).",

keywords = "BTI, CMOS, High-k, Hot-carriers, Reliability",

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AU - Amat, E.

AU - Kauerauf, T.

AU - Rodriguez, R.

AU - Nafria, M.

AU - Aymerich, X.

AU - Degraeve, R.

AU - Groeseneken, G.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - © 2012 Elsevier B.V. All rights reserved. This paper presents a comprehensive study on channel hot-carrier (CHC) degradation in short channel MOSFETs with high-k dielectric. Different reliability scenarios are analyzed, i.e., temperature influence, impact of high ID and dynamic operation conditions. To explain the CHC damage behavior in short channel devices, we divide the total CHC degradation in two components: the classical CHC damage located at drain side and the degradation produced by the voltage drop over the gate dielectric, which can be considered as bias temperature instability (BTI).

AB - © 2012 Elsevier B.V. All rights reserved. This paper presents a comprehensive study on channel hot-carrier (CHC) degradation in short channel MOSFETs with high-k dielectric. Different reliability scenarios are analyzed, i.e., temperature influence, impact of high ID and dynamic operation conditions. To explain the CHC damage behavior in short channel devices, we divide the total CHC degradation in two components: the classical CHC damage located at drain side and the degradation produced by the voltage drop over the gate dielectric, which can be considered as bias temperature instability (BTI).

KW - BTI

KW - CMOS

KW - High-k

KW - Hot-carriers

KW - Reliability

U2 - 10.1016/j.mee.2012.10.011

DO - 10.1016/j.mee.2012.10.011

M3 - Article

SN - 0167-9317

VL - 103

SP - 144

EP - 149

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics

Abstract

Keywords

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