A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics

E. Amat, T. Kauerauf, R. Rodriguez, M. Nafria, X. Aymerich, R. Degraeve, G. Groeseneken

Research output: Contribution to journalArticleResearchpeer-review

12 Citations (Scopus)

Abstract

© 2012 Elsevier B.V. All rights reserved. This paper presents a comprehensive study on channel hot-carrier (CHC) degradation in short channel MOSFETs with high-k dielectric. Different reliability scenarios are analyzed, i.e., temperature influence, impact of high ID and dynamic operation conditions. To explain the CHC damage behavior in short channel devices, we divide the total CHC degradation in two components: the classical CHC damage located at drain side and the degradation produced by the voltage drop over the gate dielectric, which can be considered as bias temperature instability (BTI).
Original languageEnglish
Pages (from-to)144-149
JournalMicroelectronic Engineering
Volume103
DOIs
Publication statusPublished - 1 Jan 2013

Keywords

  • BTI
  • CMOS
  • High-k
  • Hot-carriers
  • Reliability

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