A comprehensive investigation of gate oxide breakdown of P+Poly/PFETs under inversion mode

E. Wu, J. Suñé, W. Lai, A. Vayshenker, D. Harmon

    Research output: Contribution to journalArticleResearch

    17 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)396-399
    JournalTechnical Digest - International Electron Devices Meeting
    Volume2005
    Issue number1609361
    Publication statusPublished - 1 Jan 2005

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