A comprehensive investigation of gate oxide breakdown of P+Poly/PFETs under inversion mode

E. Wu, J. Suñé, W. Lai, A. Vayshenker, D. Harmon

Research output: Contribution to journal › Article › Research

Original language	English
Pages (from-to)	396-399
Journal	Technical Digest - International Electron Devices Meeting
Volume	2005
Issue number	1609361
Publication status	Published - 1 Jan 2005

Cite this

@article{898cd8c9d9f94c6ba3058d3b776c9f13,

title = "A comprehensive investigation of gate oxide breakdown of P+Poly/PFETs under inversion mode",

author = "E. Wu and J. Su{\~n}{\'e} and W. Lai and A. Vayshenker and D. Harmon",

year = "2005",

month = jan,

day = "1",

language = "English",

volume = "2005",

pages = "396--399",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1609361",

}

TY - JOUR

T1 - A comprehensive investigation of gate oxide breakdown of P+Poly/PFETs under inversion mode

AU - Wu, E.

AU - Suñé, J.

AU - Lai, W.

AU - Vayshenker, A.

AU - Harmon, D.

PY - 2005/1/1

Y1 - 2005/1/1

M3 - Article

VL - 2005

SP - 396

EP - 399

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

IS - 1609361

ER -