A common framework for soft and hard breakdown in ultrathin gate oxides based on the theory of point contact conduction

Research output: Contribution to journal › Article › Research

Original language	English
Pages (from-to)	171-174
Journal	Microelectronic Engineering
Volume	48
Publication status	Published - 1 Jan 1999

Cite this

@article{8facd1ac508849a8b918e564ad8a46db,

title = "A common framework for soft and hard breakdown in ultrathin gate oxides based on the theory of point contact conduction",

author = "E. Miranda and J. Su{\~n}{\'e} and R. Rodr{\'i}guez and M. Nafr{\'i}a and X. Aymerich",

year = "1999",

month = jan,

day = "1",

language = "English",

volume = "48",

pages = "171--174",

journal = "Microelectronic Engineering",

issn = "0167-9317",

}

TY - JOUR

T1 - A common framework for soft and hard breakdown in ultrathin gate oxides based on the theory of point contact conduction

AU - Miranda, E.

AU - Suñé, J.

AU - Rodríguez, R.

AU - Nafría, M.

AU - Aymerich, X.

PY - 1999/1/1

Y1 - 1999/1/1

M3 - Article

VL - 48

SP - 171

EP - 174

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -