A common framework for soft and hard breakdown in ultrathin gate oxides based on the theory of point contact conduction

Research output: Contribution to journal › Article › Research

Original language	English
Pages (from-to)	171-174
Journal	Microelectronic Engineering
Volume	48
Publication status	Published - 1 Jan 1999

Cite this

@article{8facd1ac508849a8b918e564ad8a46db,

title = "A common framework for soft and hard breakdown in ultrathin gate oxides based on the theory of point contact conduction",

author = "E. Miranda and J. Su{\~n}{\'e} and R. Rodr{\'i}guez and M. Nafr{\'i}a and X. Aymerich",

year = "1999",

month = jan,

day = "1",

language = "English",

volume = "48",

pages = "171--174",

}