Original language | English |
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Pages (from-to) | 171-174 |
Journal | Microelectronic Engineering |
Volume | 48 |
Publication status | Published - 1 Jan 1999 |
A common framework for soft and hard breakdown in ultrathin gate oxides based on the theory of point contact conduction
E. Miranda, J. Suñé, R. Rodríguez, M. Nafría, X. Aymerich
Research output: Contribution to journal › Article › Research
9
Citations
(Scopus)