A capacitance and conductance measurements of two-terminal metal-oxide-semiconductor-oxide-semiconductor capacitors on silicon-on-insulator substrates

Denis Flandre; Francesca Campabadal; Joan Esteve; E. Lora-Tamayo; Febe Van de Wiele

A capacitance and conductance measurements of two-terminal metal-oxide-semiconductor-oxide-semiconductor capacitors on silicon-on-insulator substrates

Denis Flandre, Francesca Campabadal, Joan Esteve, E. Lora-Tamayo, Febe Van de Wiele

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research

Original language	English
Pages (from-to)	5111-5113
Journal	Journal of Applied Physics
Volume	70
Issue number	9
Publication status	Published - 1 Nov 1991

Cite this

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title = "A capacitance and conductance measurements of two-terminal metal-oxide-semiconductor-oxide-semiconductor capacitors on silicon-on-insulator substrates",

author = "Denis Flandre and Francesca Campabadal and Joan Esteve and E. Lora-Tamayo and \{Van de Wiele\}, Febe",

year = "1991",

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language = "English",

volume = "70",

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journal = "Journal of Applied Physics",

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T1 - A capacitance and conductance measurements of two-terminal metal-oxide-semiconductor-oxide-semiconductor capacitors on silicon-on-insulator substrates

AU - Flandre, Denis

AU - Campabadal, Francesca

AU - Esteve, Joan

AU - Lora-Tamayo, E.

AU - Van de Wiele, Febe

PY - 1991/11/1

Y1 - 1991/11/1

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M3 - Article

SN - 0021-8979

VL - 70

SP - 5111

EP - 5113

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

A capacitance and conductance measurements of two-terminal metal-oxide-semiconductor-oxide-semiconductor capacitors on silicon-on-insulator substrates

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