A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO<inf>2</inf>/Si-n⁺-based RRAMs

Physics

• Monte Carlo 66%
• Resistive Switching 66%
• Kinetics 66%
• Simulation 66%
• Dielectrics 33%
• Electric Potential 33%
• Cation 33%
• Percolation 33%
• Migration 33%
• Temperature 33%
• Atoms 33%
• Physics 33%
• Algorithms 33%

Engineering

• Simulation Time 66%
• Simulation 66%
• Kinetic 66%
• Algorithm 33%
• Electric Potential 33%
• Conductive Filament 33%
• Simulation Tool 33%
• Physical Variable 33%
• Characteristics 33%
• Temperature 33%
• Accuracy 33%

Material Science

• Devices 100%
• Dielectric Material 33%
• Redox Process 33%