A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO<inf>2</inf>/Si-n<sup>+</sup>-based RRAMs

S. Aldana, P. García-Fernández, Alberto Rodríguez-Fernández, R. Romero-Zaliz, M. B. González, F. Jiménez-Molinos, F. Campabadal, F. Gómez-Campos, J. B. Roldán

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28 Citations (Scopus)

Abstract

© 2017 IOP Publishing Ltd. A new RRAM simulation tool based on a 3D kinetic Monte Carlo algorithm has been implemented. The redox reactions and migration of cations are developed taking into consideration the temperature and electric potential 3D distributions within the device dielectric at each simulation time step. The filamentary conduction has been described by obtaining the percolation paths formed by metallic atoms. Ni/HfO2/Si-n+ unipolar devices have been fabricated and measured. The different experimental characteristics of the devices under study have been reproduced with accuracy by means of simulations. The main physical variables can be extracted at any simulation time to clarify the physics behind resistive switching; in particular, the final conductive filament shape can be studied in detail.
Original languageEnglish
Article number335103
JournalJournal of Physics D: Applied Physics
Volume50
Issue number33
DOIs
Publication statusPublished - 24 Jul 2017

Keywords

  • conductive filaments
  • kinetic Monte Carlo
  • resistive switching memory
  • simulation
  • variability

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