A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO<inf>2</inf>/Si-n+-based RRAMs

S. Aldana; P. García-Fernández; Alberto Rodríguez-Fernández; R. Romero-Zaliz; M. B. González; F. Jiménez-Molinos; F. Campabadal; F. Gómez-Campos; J. B. Roldán

doi:10.1088/1361-6463/aa7939

A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO<inf>2</inf>/Si-n+-based RRAMs

S. Aldana, P. García-Fernández, Alberto Rodríguez-Fernández, R. Romero-Zaliz, M. B. González, F. Jiménez-Molinos, F. Campabadal, F. Gómez-Campos, J. B. Roldán

Department of Electronic Engineering

Research output: Contribution to journal › Article › Research › peer-review

42 Citations (Scopus)

Abstract

© 2017 IOP Publishing Ltd. A new RRAM simulation tool based on a 3D kinetic Monte Carlo algorithm has been implemented. The redox reactions and migration of cations are developed taking into consideration the temperature and electric potential 3D distributions within the device dielectric at each simulation time step. The filamentary conduction has been described by obtaining the percolation paths formed by metallic atoms. Ni/HfO2/Si-n+ unipolar devices have been fabricated and measured. The different experimental characteristics of the devices under study have been reproduced with accuracy by means of simulations. The main physical variables can be extracted at any simulation time to clarify the physics behind resistive switching; in particular, the final conductive filament shape can be studied in detail.

Original language	English
Article number	335103
Journal	Journal Physics D: Applied Physics
Volume	50
Issue number	33
DOIs	https://doi.org/10.1088/1361-6463/aa7939
Publication status	Published - 24 Jul 2017

Keywords

conductive filaments
kinetic Monte Carlo
resistive switching memory
simulation
variability

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10.1088/1361-6463/aa7939

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Aldana, S., García-Fernández, P., Rodríguez-Fernández, A., Romero-Zaliz, R., González, M. B., Jiménez-Molinos, F., Campabadal, F., Gómez-Campos, F., & Roldán, J. B. (2017). A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO<inf>2</inf>/Si-n+-based RRAMs. Journal Physics D: Applied Physics, 50(33), [335103]. https://doi.org/10.1088/1361-6463/aa7939

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title = "A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs",

abstract = "{\textcopyright} 2017 IOP Publishing Ltd. A new RRAM simulation tool based on a 3D kinetic Monte Carlo algorithm has been implemented. The redox reactions and migration of cations are developed taking into consideration the temperature and electric potential 3D distributions within the device dielectric at each simulation time step. The filamentary conduction has been described by obtaining the percolation paths formed by metallic atoms. Ni/HfO2/Si-n+ unipolar devices have been fabricated and measured. The different experimental characteristics of the devices under study have been reproduced with accuracy by means of simulations. The main physical variables can be extracted at any simulation time to clarify the physics behind resistive switching; in particular, the final conductive filament shape can be studied in detail.",

keywords = "conductive filaments, kinetic Monte Carlo, resistive switching memory, simulation, variability",

author = "S. Aldana and P. Garc{\'i}a-Fern{\'a}ndez and Alberto Rodr{\'i}guez-Fern{\'a}ndez and R. Romero-Zaliz and Gonz{\'a}lez, {M. B.} and F. Jim{\'e}nez-Molinos and F. Campabadal and F. G{\'o}mez-Campos and Rold{\'a}n, {J. B.}",

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Aldana, S, García-Fernández, P, Rodríguez-Fernández, A, Romero-Zaliz, R, González, MB, Jiménez-Molinos, F, Campabadal, F, Gómez-Campos, F & Roldán, JB 2017, 'A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO<inf>2</inf>/Si-n+-based RRAMs', Journal Physics D: Applied Physics, vol. 50, no. 33, 335103. https://doi.org/10.1088/1361-6463/aa7939

TY - JOUR

T1 - A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs

AU - Aldana, S.

AU - García-Fernández, P.

AU - Rodríguez-Fernández, Alberto

AU - Romero-Zaliz, R.

AU - González, M. B.

AU - Jiménez-Molinos, F.

AU - Campabadal, F.

AU - Gómez-Campos, F.

AU - Roldán, J. B.

PY - 2017/7/24

Y1 - 2017/7/24

N2 - © 2017 IOP Publishing Ltd. A new RRAM simulation tool based on a 3D kinetic Monte Carlo algorithm has been implemented. The redox reactions and migration of cations are developed taking into consideration the temperature and electric potential 3D distributions within the device dielectric at each simulation time step. The filamentary conduction has been described by obtaining the percolation paths formed by metallic atoms. Ni/HfO2/Si-n+ unipolar devices have been fabricated and measured. The different experimental characteristics of the devices under study have been reproduced with accuracy by means of simulations. The main physical variables can be extracted at any simulation time to clarify the physics behind resistive switching; in particular, the final conductive filament shape can be studied in detail.

AB - © 2017 IOP Publishing Ltd. A new RRAM simulation tool based on a 3D kinetic Monte Carlo algorithm has been implemented. The redox reactions and migration of cations are developed taking into consideration the temperature and electric potential 3D distributions within the device dielectric at each simulation time step. The filamentary conduction has been described by obtaining the percolation paths formed by metallic atoms. Ni/HfO2/Si-n+ unipolar devices have been fabricated and measured. The different experimental characteristics of the devices under study have been reproduced with accuracy by means of simulations. The main physical variables can be extracted at any simulation time to clarify the physics behind resistive switching; in particular, the final conductive filament shape can be studied in detail.

KW - conductive filaments

KW - kinetic Monte Carlo

KW - resistive switching memory

KW - simulation

KW - variability

U2 - 10.1088/1361-6463/aa7939

DO - 10.1088/1361-6463/aa7939

M3 - Article

VL - 50

IS - 33

M1 - 335103

ER -

A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO<inf>2</inf>/Si-n<sup>+</sup>-based RRAMs

Abstract

Keywords

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