2D semiconductor device simulations by WENO-Boltzmann schemes: Efficiency, boundary conditions and comparison to Monte Carlo methods

Mathematics

• Semiconductor Device Simulation 100%
• Ludwig Boltzmann 65%
• Boltzmann Transport Equation 64%
• Monte Carlo method 60%
• Boundary conditions 37%
• MOSFET 33%
• Direct Simulation Monte Carlo 31%
• Direct numerical Simulation 27%
• Boundary Singularities 27%
• Semiconductor Devices 26%
• Modeling 25%
• Demonstrate 23%
• Electric Field 21%
• Transport Equation 20%
• Poisson's equation 19%
• Benchmark 19%
• Numerical Scheme 17%
• Finite Difference 17%
• Grid 15%
• Higher Order 13%
• Simulation 12%

Engineering & Materials Science

• Semiconductor device models 98%
• Poisson equation 74%
• Direct numerical simulation 74%
• Semiconductor devices 68%
• Monte Carlo methods 62%
• Electric fields 53%
• Numerical models 47%
• Boundary conditions 44%
• Geometry 35%

Physics & Astronomy

• Boltzmann transport equation 73%
• semiconductor devices 59%
• Monte Carlo method 53%
• field effect transistors 45%
• boundary conditions 41%
• Poisson equation 30%
• direct numerical simulation 29%
• grids 23%
• simulation 22%
• electric fields 17%
• geometry 16%