Technology and characterization of silicon carbide films for high temperature applications TECSICA

Project Details

Description

The project is primarily devoted to the deposition of amorphous, polycrystalline and monocrystalline silicon carbide films by means of LPCVD and MBE; doping during deposition and ion implantation provides fundamental information on the physical and optical effects to be used in the design and implementation of integrated systems. Research on the films morphology by TEM, XRD and Raman spectroscopy will provide an insight into their structure, their stoechiometry and their growth mechanisms. The outcome of the work should provide a basis for the design of integrated systems incorporating sensors with improved performance and reliability.
StatusFinished
Effective start/end date1/02/9330/01/96

Funding

  • European Commission: €899,729.00

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