Obtenció per dipòsit químic del vapor (CVD) i estudi tèrmic i estructural de capes amorfes i policristal.lines de Si1-xCx.

The project is focussed in the preparation by low pressure chemical vapor deposition of both amorphous Si1-xCx and Si1-xCx:H and polycrystalline films. The later will be either as-prepared by chemical vapor deposition or obtained by heat treatment of the amorphous films. Three complementary aims are identified: 1) the set up of a chemical vapor deposition; 2) the preparation of films; and 3) their thermal and structural characterization. The research team has expertise on preparation of amorphous and polycrystalline films. The set up of a new equipment gives freedom to configure it in terms of optimization of the deposition parameters. Different precursors will be studied to find out homogeneous non-stoequiometric films with an improved quality and minimizing stress at the substrate/layer interface. The thermal stability will be checked by differential thermal analysis. The morphological