Obtenció per dipòsit químic del vapor (CVD) i estudi tèrmic i estructural de capes amorfes i policristal.lines de Si1-xCx.

  • Mora Aznar, Maria Teresa (Principal Investigator)
  • El Felk, Zakia (Investigator)
  • Hurtos Casals, Esther (Investigator)
  • Rodriguez Viejo, Javier (Investigator)
  • El Souaidi, Mohamed (Investigator)

Project Details


The project is focussed in the preparation by low pressure chemical vapor deposition of both amorphous Si1-xCx and Si1-xCx:H and polycrystalline films. The later will be either as-prepared by chemical vapor deposition or obtained by heat treatment of the amorphous films. Three complementary aims are identified: 1) the set up of a chemical vapor deposition; 2) the preparation of films; and 3) their thermal and structural characterization. The research team has expertise on preparation of amorphous and polycrystalline films. The set up of a new equipment gives freedom to configure it in terms of optimization of the deposition parameters. Different precursors will be studied to find out homogeneous non-stoequiometric films with an improved quality and minimizing stress at the substrate/layer interface. The thermal stability will be checked by differential thermal analysis. The morphological
Effective start/end date1/07/951/07/98


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