This project has the goal to develop new materials, semiconductors and metallic alloys, with specific microestructures. We propose to deepen on the knowledge of the mechanisms which drive formation and growth of thin fims and bulk materials, as well as on the basic foundations of multicomponent and polyphasic phase transformations. We propose to carry a theoretical and experimental analysis of the nucleation and growth processes and an experimental development of preparation methods of some new materials. We will analyse the kinetics of nanocrystallization induced thermically in glassy metals and the nanostructures formation vesus the deposition conditions by CVD in semiconductors. Our objective is the study of new materials of high added value in techinical aplications. In semiconductors, we will focus the study on the preparation of poly- and monocristaline SiC films with applications in the development of high temperature sensors pseudomorphic Si\sub 1-x\nosub C\sub x thin films and Si y SiC nanoestructures. The nanocrystals are potential candidates for applications in light emission devices (LED) compatible with optoelectronics circuits based in Si. In metallic alloys we will analyse the imporvement of porcessing Al wires and the nanocrystallization process which results in performand either soft magnetic or strength hardened light materials. Frrom that, we propose to improve the already developed formulation for the description of microstructure, as obtained by DSC and Mössbauer spectroscopy of process controlled by nucleation and growth and to build a much powerful formulation, grounded in the Fokker-Planck equations, to get the time evolutions of mycrostructures. We will also treat homo-and heteropitaxial growth of both Si and SiC using a Montecarlo dynamic simulation. Finally, we are also working on the correlation between macroscopic properties (such as magnetic properties, SAXS spectra, etc.) and the grain size distribution.
|Effective start/end date||1/12/98 → 30/11/01|