Project Details
Description
The main objective of the proposed project, i.e. the investigation of the ionising radiation effects on MOS devices, can be divided in two seccondary objectives:
1. Impact of radiation on microelectronic devices/circuits: characterization and modelling.
2. Nanometer scale characterization of the radiation effects on the gate oxide reliability of MOS structures
| Status | Finished |
|---|---|
| Effective start/end date | 1/01/05 → 31/03/07 |
Collaborative partners
- University of Padua (Coordinator) (lead)
Funding
- Ministerio de Educación y Ciencia (MEC): €10,820.00
Fingerprint
Explore the research topics touched on by this project. These labels are generated based on the underlying awards/grants. Together they form a unique fingerprint.